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Nanographene charge trapping memory with a large memory window

机译：具有大存储窗口的纳米石墨烯电荷陷阱存储

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摘要

Nanographene is a promising alternative to metal nanoparticles or semiconductor nanocrystals for charge trapping memory. In general, a high density of nanographene is required in order to achieve high charge trapping capacity. Here, we demonstrate a strategy of fabrication for a high density of nanographene for charge trapping memory with a large memory window. The fabrication includes two steps: (1) direct growth of continuous nanographene film; and ( 2) isolation of the as-grown film into high-density nanographene by plasma etching. Compared with directly grown isolated nanographene islands, abundant defects and edges are formed in nanographene under argon or oxygen plasma etching, i.e. more isolated nanographene islands are obtained, which provides more charge trapping sites. As-fabricated nanographene charge trapping memory shows outstanding memory properties with a memory window as wide as similar to 9 V at a relative low sweep voltage of +/- 8 V, program/erase speed of similar to 1 ms and robust endurance of > 1000 cycles. The high-density nanographene charge trapping memory provides an outstanding alternative for downscaling technology beyond the current flash memory.
机译：纳米石墨烯是用于电荷捕获存储器的金属纳米颗粒或半导体纳米晶体的有前途的替代物。通常，需要高密度的纳米石墨烯以实现高电荷捕获能力。在这里，我们展示了一种高密度纳米石墨烯的制造策略，用于具有大存储窗口的电荷陷阱存储。制备包括两个步骤：（1）直接生长连续的纳米石墨烯膜; （2）通过等离子体蚀刻将生长的膜分离成高密度纳米石墨烯。与直接生长的分离的纳米石墨烯岛相比，在氩气或氧等离子体蚀刻下，纳米石墨烯中形成了大量的缺陷和边缘，即，获得了更多的分离的纳米石墨烯岛，这提供了更多的电荷俘获位点。制成的纳米石墨烯电荷陷阱存储器具有出色的存储特性，在+/- 8 V的相对低扫描电压下，其存储窗口宽至9 V，编程/擦除速度大约1毫秒，耐用性> 1000周期。高密度纳米石墨烯电荷陷阱存储器提供了超越当前闪存的降尺度技术的出色替代方案。

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