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Output power enhancement from ZnO nanorods piezoelectric nanogenerators by Si microhole arrays

机译：Si微孔阵列增强ZnO纳米棒压电纳米发电机的输出功率

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摘要

We demonstrate the enhancement of output power from a ZnO nanorod (NR)-based piezoelectric nanogenerator by using Si microhole (Si-mu H) arrays. The depth-controlled Si-mu H arrays were fabricated by using the deep reactive ion etching method. The ZnO NRs were grown along the Si-mu H surface, in holes deeper than 20 mu m. The polymer layer, polydimethylsiloxane, which acts a stress diffuser and electrical insulator, was successfully penetrated into the deep Si-mu H arrays. Optical investigations show that the crystalline quality of the ZnO NRs on the Si-mu H arrays was not degraded, even though they were grown on the deeper Si-mu H arrays. As the depth of the Si-mu H arrays increase from 0 to 20 mu m, the output voltage was enhanced by around 8.1 times while the current did not increase. Finally, an output power enhancement of ten times was obtained. This enhancement of the output power was consistent with the increase in the surface area, and was mainly attributed to the accumulation of the potentials generated by the series-connected ZnO NR-based nanogenerators, whose number increases as the depth of the Si-mu H increases.
机译：我们演示了通过使用Si微孔（Si-mu H）阵列增强基于ZnO纳米棒（NR）的压电纳米发电机的输出功率。采用深度反应离子刻蚀法制备了深度可控的Si-mu H阵列。 ZnO NRs沿Si-mu H表面生长，孔深超过20μm。充当应力扩散器和电绝缘体的聚合物层聚二甲基硅氧烷已成功渗透到深Si-mu H阵列中。光学研究表明，Si-mu H阵列上的ZnO NRs的晶体质量没有降低，即使它们生长在更深的Si-mu H阵列上也是如此。随着Si-mu H阵列的深度从0增加到20μm，输出电压提高了约8.1倍，而电流却没有增加。最终，获得十倍的输出功率增强。输出功率的这种增加与表面积的增加是一致的，并且主要归因于串联连接的基于ZnO NR的纳米发电机所产生的电势的积累，其数量随着Si-mu H的深度而增加。增加。

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