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首页> 外文期刊>Nanotechnology >Facile construction of vertically aligned ZnO nanorod/PEDOT:PSS hybrid heterojunction-based ultraviolet light sensors: efficient performance and mechanism
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Facile construction of vertically aligned ZnO nanorod/PEDOT:PSS hybrid heterojunction-based ultraviolet light sensors: efficient performance and mechanism

机译：垂直排列的ZnO纳米棒/ PEDOT：PSS混合异质结型紫外光传感器的简便构建：高效的性能和机理

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摘要

We demonstrate a simple, planar manufacturing process-compatible fabrication of highly efficient UV sensors based on a hybrid heterojunction of an array of vertically aligned ZnO nanorods (NRs) and PEDOT:PSS. The ZnO NR array was grown by the solution growth process and the aspect ratio (length 1 to 4 itm, diameter similar to 80 nm) of the rods was controlled by varying the growth time. UV sensors based on (i) naked ZnO NRs and (ii) ZnO NR/PEDOT:PSS heterojunctions were fabricated and tested. The UV sensitivity of bare ZnO NRs was found to increase with increasing aspect ratio of the NRs due to the increase in the photogenerated charge carriers as the fraction of material interacting with the light increases. Under 5 V bias, naked ZnO NR arrays showed a photocurrent of 8.84 x 10(-5) A, a responsivity of 0.538 A W-1 and a sensitivity of 4.80 under UV (lambda = 256 nm, 130 W) illumination. ZnO NR/PEDOT:PSS hybrid heterojunctions showed diode-like behavior with a leakage current less than 2.54 x 10(-8) A at 5 V and forward turn-on voltage of 1.1 V. ZnO NR/polymer-based hybrid heterojunctions show a photocurrent of 6.74 x 10(-4) A, responsivity of 5.046 A W-1 and excellent sensitivity of 37.65 under UV (lambda = 256 nm, 130 W) illumination. Compared with bare ZnO NR arrays, the ZnO NR/polymer heterojunction device shows responsivity enhanced by a factor of 10, sensitivity enhanced by a factor of 8 and faster rise and decay time. The enhanced performance may be due to effective charge separation guided by the built-in potential formed at the interface between ZnO NRs and PEDOT:PSS.
机译：我们展示了基于垂直排列的ZnO纳米棒（NRs）和PEDOT：PSS的混合异质结的高效紫外线传感器的简单，平面制造工艺兼容的制造。通过溶液生长工艺生长ZnO NR阵列，并通过改变生长时间来控制棒的长宽比（长度1至4 itm，直径类似于80 nm）。制作并测试了基于（i）裸露的ZnO NR和（ii）ZnO NR / PEDOT：PSS异质结的UV传感器。发现裸露的ZnO NR的UV敏感性随着NR纵横比的增加而增加，这是由于随着与光相互作用的材料分数的增加，光生电荷载流子的增加。在5 V偏压下，裸露的ZnO NR阵列在UV（λ= 256 nm，130 W）照射下显示的光电流为8.84 x 10（-5）A，响应度为0.538 A W-1，灵敏度为4.80。 ZnO NR / PEDOT：PSS杂化异质结在5 V和正向开启电压为1.1 V时显示类似二极管的行为，漏电流小于2.54 x 10（-8）A。ZnO NR /聚合物杂化异质结显示出在UV（λ= 256 nm，130 W）照射下，光电流为6.74 x 10（-4）A，响应度为5.046 A W-1，出色的灵敏度为37.65。与裸露的ZnO NR阵列相比，ZnO NR /聚合物异质结器件的响应度提高了10倍，灵敏度提高了8倍，并且上升和衰减时间更快。增强的性能可能是由于在ZnO NR与PEDOT：PSS之间的界面处形成的内置电势引导了有效的电荷分离。

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