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Controlling the work function of molybdenum disulfide by in situ metal deposition

机译：通过原位金属沉积控制二硫化钼的功函数

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摘要

Control of the work function of molybdenum disulfide (MoS2) under ultrathin metal was investigated using in situ metal deposition and direct ultraviolet photoelectron spectroscopy measurement in an ultra-high vacuum system. When the metal thickness turned from two dimensional into bulk, the work function was also raised up at the nickel-MoS2 interface, barely changed at the titanium-MoS2 interface and lowered at the hafnium-MoS2 interface. Meanwhile, the mechanisms of charge transfer and band alignment with metal deposition were also discussed. The Schottky barrier at metal-MoS2 interfaces could be tailored by both types and thicknesses of deposited metal. The low work function metal was a good indicator for MoS2 contact electrodes. It paved the way towards future high performance MoS2 device applications.
机译：利用超高真空系统中的原位金属沉积和直接紫外光电子能谱测量研究了超薄金属下二硫化钼（MoS2）的功函数控制。当金属厚度从二维转变为整体时，功函数也在镍-MoS2界面处升高，在钛-MoS2界面处几乎没有变化，而在--MoS2界面处却降低了。同时，还讨论了金属沉积过程中电荷转移和能带对准的机理。金属-MoS2界面处的肖特基势垒可以根据沉积金属的类型和厚度来定制。低功函数金属是MoS2接触电极的良好指示。它为将来的高性能MoS2设备应用铺平了道路。

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