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Flexible ambipolar organic field-effect transistors with reverse-offset-printed silver electrodes for a complementary inverter

机译：带有反向胶印银电极的柔性双极性有机场效应晶体管，用于互补逆变器

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摘要

We report ambipolar organic field-effect transistors and complementary inverter circuits with reverse-offset-printed (ROP) Ag electrodes fabricated on a flexible substrate. A diketopyrrolopyrrole-based co-polymer (PDPP-TAT) was used as the semiconductor and poly (methyl methacrylate) was used as the gate insulator. Considerable improvement is observed in the n-channel electrical characteristics by inserting a cesium carbonate (Cs2CO3) as the electron-injection/hole-blocking layer at the interface between the semiconductors and the electrodes. The saturation mobility values are 0.35 cm(2) V-1 s(-1) for the p-channel and 0.027 cm(2) V-1 s(-1) for the n-channel. A complementary inverter is demonstrated based on the ROP process, and it is selectively controlled by the insertion of Cs2CO3 onto the n-channel region via thermal evaporation. Moreover, the devices show stable operation during the mechanical bending test using tensile strains ranging from 0.05% to 0.5%. The results confirm that these devices have great potential for use in flexible and inexpensive integrated circuits over a large area.
机译：我们报告了双极性有机场效应晶体管和互补的逆变器电路，以及在柔性基板上制造的反向胶版印刷（ROP）Ag电极。使用基于二酮吡咯并吡咯的共聚物（PDPP-TAT）作为半导体，使用聚（甲基丙烯酸甲酯）作为栅极绝缘体。通过在半导体与电极之间的界面处插入碳酸铯（Cs2CO3）作为电子注入/空穴阻挡层，n沟道电特性得到了显着改善。对于p通道，饱和迁移率值为0.35 cm（2）V-1 s（-1），对于n通道为0.027 cm（2）V-1 s（-1）。演示了一种基于ROP工艺的互补逆变器，该逆变器通过热蒸发将Cs2CO3插入n通道区域来进行选择性控制。此外，该设备在机械弯曲测试期间使用0.05％至0.5％的拉伸应变显示出稳定的操作。结果证实，这些器件具有很大的潜力，可用于大面积的灵活而廉价的集成电路。

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