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pH driven addressing of silicon nanowires onto Si3N4/SiO2 micro-patterned surfaces

机译：pH驱动的硅纳米线在Si3N4 / SiO2微图案化表面上的寻址

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pH was used as the main driving parameter for specifically immobilizing silicon nanowires onto Si3N4 microsquares at the surface of a SiO2 substrate. Different pH values of the coating aqueous solution enabled to experimentally distribute nanowires between silicon nitride and silicon dioxide: at pH 3 nanowires were mainly anchored on Si3N4; they were evenly distributed between SiO2 and Si3N4 at pH 2.8; and they were mainly anchored on SiO2 at pH 2. A theoretical model based on DLVO theory and surface protonation/deprotonation equilibria was used to study how, in adequate pH conditions, Si nanowires could be anchored onto specific regions of a patterned Si3N4/SiO2 surface. Instead of using capillary forces, or hydrophilic/hydrophobic contrast between the two types of materials, the specificity of immobilization could rely on surface electric charge contrasts between Si3N4 and SiO2. This simple and generic method could be used for addressing a large diversity of nano-objects onto patterned substrates.
机译：pH值是主要驱动参数，用于将硅纳米线专门固定在SiO2衬底表面的Si3N4微方块上。涂料水溶液的不同pH值能够通过实验将纳米线分布在氮化硅和二氧化硅之间：在pH 3时，纳米线主要固定在Si3N4上;它们在pH 2.8时均匀分布在SiO2和Si3N4之间。并且它们主要在pH 2的条件下锚定在SiO2上。基于DLVO理论和表面质子化/去质子化平衡的理论模型用于研究在适当的pH条件下如何将Si纳米线锚定在图案化的Si3N4 / SiO2表面的特定区域上。代替使用毛细作用力或两种材料之间的亲水/疏水对比，固定的特异性可以依赖于Si3N4和SiO2之间的表面电荷对比。这种简单而通用的方法可用于将大量纳米物体处理到有图案的基板上。

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