Direct growth of molybdenum disulfide on arbitrary insulating surfaces by chemical vapor deposition

Wang Jiao; Chen Linfeng; Lu Wenjing; Zeng Mengqi; Tan Lifang; Ren Feng; Jiang Changzhong; Fu Lei

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Direct growth of molybdenum disulfide on arbitrary insulating surfaces by chemical vapor deposition

机译：通过化学气相沉积法在任意绝缘表面上直接生长二硫化钼

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We report a direct growth approach of large area, uniform and patternable few layer molybdenum disulfide on arbitrary insulating substrates, including polymers and glass. The method can effectively control the number of layers with 100% surface coverage and avoid the transferring process.

机译：我们报告了在任意绝缘基材（包括聚合物和玻璃）上直接生长大面积，均匀且可图案化的几层二硫化钼的方法。该方法可以有效控制表面覆盖率为100％的层数，并且避免了转移过程。

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《RSC Advances》 |2015年第6期|共4页
作者
Wang Jiao; Chen Linfeng; Lu Wenjing; Zeng Mengqi; Tan Lifang; Ren Feng; Jiang Changzhong; Fu Lei;
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1. Direct growth of molybdenum disulfide on arbitrary insulating surfaces by chemical vapor deposition [J] . Wang Jiao, Chen Linfeng, Lu Wenjing, RSC Advances . 2015,第6期

机译：通过化学气相沉积法在任意绝缘表面上直接生长二硫化钼
2. Low-Temperature Synthesis of Large-Scale Molybdenum Disulfide Thin Films Directly on a Plastic Substrate Using Plasma-Enhanced Chemical Vapor Deposition [J] . Ahn Chisung, Lee Jinhwan, Kim Hyeong-U, Advanced Materials . 2015,第35期

机译：等离子体增强化学气相沉积法直接在塑料基底上低温合成大型二硫化钼薄膜
3. Catalytic growth of large area monolayer molybdenum disulfide film by chemical vapor deposition [J] . Li H., Zhang X. H., Tang Z. K. Thin Solid Films . 2019,第JANa1期

机译：化学气相沉积催化生长大面积单层二硫化钼薄膜
4. GROWTH OF MONOLAYER MOLYBDENUM DISULFIDE AND DISELENIDE WITH CHEMICAL VAPOR DEPOSITION [C] . X. WANG, W. L. CHOW, J. GUSAKOVA, International conference on physics, chemistry and applications of nanostructures . 2015

机译：单层钼二硫化钼和二烯烃的生长与化学气相沉积
5. Advances in Chemical Vapor Deposition Growth of Molybdenum Disulfide for Photodetectors and Flexible Electronics [D] . de Anda Orea, Carlos Francisco. 2017

机译：用于光电探测器和柔性电子的二硫化钼化学气相沉积生长的研究进展
6. Application-Oriented Growth of a Molybdenum Disulfide (MoS2) Single Layer by Means of Parametrically Optimized Chemical Vapor Deposition [O] . Pinakapani Tummala, Alessio Lamperti, Mario Alia, 2020

机译：通过参数优化的化学气相沉积法实现面向应用的二硫化钼（MoS2）单层生长
7. Chemical vapor deposition growth of bilayer graphene in between molybdenum disulfide sheets [O] . Kwieciñski, Wojciech, Sotthewes, Kai, Poelsema, Bene, 2017

机译：二硫化钼片之间双层石墨烯的化学气相沉积生长
8. Chemical Vapor Deposition of Atomically-Thin Molybdenum Disulfide (MoS2). [R] . Kaplan, D., Mills, K., Swaminathan, V. 2015

机译：化学气相沉积的原子薄二硫化钼（mos2）。

Direct growth of molybdenum disulfide on arbitrary insulating surfaces by chemical vapor deposition

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