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首页> 外文期刊>RSC Advances >Simultaneous in situ and ex situ growth of ultra-long Si3N4 nanobelts with different optical properties
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Simultaneous in situ and ex situ growth of ultra-long Si3N4 nanobelts with different optical properties

机译：具有不同光学特性的超长Si3N4纳米带同时原位和异位生长

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摘要

In situ and ex situ growth of ultra-long Si3N4 nanobelts (NBs) was simultaneously achieved via an effective method with the raw materials of graphite, nanosilicon and nanosilica. In situ growth of ultra-long Si3N4 NBs on the surface of the powder mixture resulted in a cross-section of 30-50 nm in thickness and 100-250 nm in width, and a length that can grow up to several millimeters. The width and thickness of the NBs obtained on the inner walls of the crucible, namely ex situ growth of Si3N4 NBs, are in the range of 200-500 nm and 50-200 nm, respectively. A vapor-solid (VS) mechanism was proposed for the growth mode of the in situ growth of Si3N4 NBs, while VS and vapor-liquid-solid (VLS) mechanisms simultaneously existed in the growth of the Si3N4 NBs obtained on the inner walls of the crucible. This method provides an effective way of preparing Si3N4 NBs on an industrial scale. The room-temperature photoluminescence (PL) spectra show that the synthesized alpha-Si3N4 NBs both had two strong emissions peaks, but the PL spectrum of the ex situ NBs shows an obvious red-shift compared to that of the in situ NBs, making it a potential material for applications in special optoelectronic nanodevices.
机译：通过一种有效的方法，利用石墨，纳米硅和纳米二氧化硅的原料，同时实现了超长Si3N4纳米带的原位和异位生长。在粉末混合物的表面上原位生长超长Si3N4 NB，其横截面的厚度为30-50 nm，宽度为100-250 nm，长度可以增长到几毫米。在坩埚的内壁上获得的NB的宽度和厚度，即Si 3 N 4 NB的非原位生长，分别在200-500nm和50-200nm的范围内。对于Si3N4 NBs的原位生长模式，提出了汽固（VS）机理，在内壁Si3N4 NBs的生长中同时存在VS和汽液固（VLS）机理。坩埚。该方法提供了一种工业规模制备Si3N4 NB的有效方法。室温光致发光（PL）光谱显示合成的α-Si3N4NB都具有两个强发射峰，但与原位NB相比，非原位NB的PL光谱显示出明显的红移，使其一种用于特殊光电纳米器件的潜在材料。

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