• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>RSC Advances >Efficient perovskite light-emitting diodes by film annealing temperature control
【24h】

Efficient perovskite light-emitting diodes by film annealing temperature control

机译：通过薄膜退火温度控制实现高效钙钛矿发光二极管

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Perovskite light-emitting diodes (PeLEDs) have attracted much attention in the past two years due to their high photo-luminescence quantum efficiencies and wavelength tuneable characteristics. In this work, the effect of annealing temperature and time on the perovskite (CH3NH3PbBr3) films and devices have been investigated in detail. The properties including photoluminescence, crystallinity and morphology of perovskite films together with device performance have been affected significantly by the annealing temperature and time. The PeLED with 80 degrees C annealing for 20 min shows the best device performance and exhibits a maximum luminance of 13 700 cd m(-2), and a maximum current efficiency of 8.22 cd A(-1). This work will provide useful information for the future optimization and development in high quality perovskite films and high performance PeLEDs.
机译：钙钛矿发光二极管（PeLED）在过去两年中因其高的光致发光量子效率和波长可调谐特性而备受关注。在这项工作中，已详细研究了退火温度和时间对钙钛矿（CH3NH3PbBr3）膜和器件的影响。钙钛矿薄膜的光致发光，结晶度和形态以及器件性能等特性已受到退火温度和时间的显着影响。经过80摄氏度退火20分钟的PeLED表现出最佳的器件性能，最大亮度为13 700 cd m（-2），最大电流效率为8.22 cd A（-1）。这项工作将为高质量钙钛矿薄膜和高性能PeLED的未来优化和开发提供有用的信息。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号