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首页> 外文期刊>Optics Communications: A Journal Devoted to the Rapid Publication of Short Contributions in the Field of Optics and Interaction of Light with Matter >CMOS monolithic optoelectronic integrated circuit for on-chip optical interconnection
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CMOS monolithic optoelectronic integrated circuit for on-chip optical interconnection

机译：用于片上光互连的CMOS单片光电集成电路

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摘要

A monolithic silicon CMOS optoelectronic integrated circuit (OEIC) is designed and fabricated using standard 0.35-(mu)m CMOS technology. This OEIC monolithically integrates light emitting diode (LED), silicon dioxide waveguide, photodetector and receiver circuit on a single silicon chip. The silicon LED operates in reverse breakdown mode and can emit light at 8.5 V. The output optical power is 31.2 nW under 9.8 V reverse bias. The measured spectrum of LED showed two peaks at 760 nm and 810 nm, respectively. The waveguide is composed of silicon dioxide/metal multiple layers. The responsivity of the n-well/p-substrate diode photodetector is 0.42 A/W and the dark current is 7.8 pA. The LED-emitted light transmits through the waveguide and can be detected by the photodetector. Experimental results show that on-chip optical interconnects are achieved by standard CMOS technology successfully.
机译：使用标准的0.35μmCMOS技术设计和制造单片CMOS CMOS光电集成电路。该OEIC将发光二极管（LED），二氧化硅波导，光电检测器和接收器电路单片集成在单个硅芯片上。硅LED工作在反向击穿模式，可以在8.5 V的电压下发光。在9.8 V反向偏置下，输出光功率为31.2 nW。 LED的测量光谱分别在760 nm和810 nm处显示两个峰。波导由二氧化硅/金属多层组成。 n阱/ p衬底二极管光电检测器的响应度为0.42 A / W，暗电流为7.8 pA。 LED发出的光穿过波导，可以被光电探测器检测到。实验结果表明，通过标准CMOS技术成功实现了片上光学互连。

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