首页> 外文期刊>Optics Communications: A Journal Devoted to the Rapid Publication of Short Contributions in the Field of Optics and Interaction of Light with Matter >Laser-diode end-pumped intracavity frequency doubling semiconductor saturable absorber mirror passively mode-locked picosecond lasers
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Laser-diode end-pumped intracavity frequency doubling semiconductor saturable absorber mirror passively mode-locked picosecond lasers

机译:激光二极管端面泵浦腔内倍频半导体可饱和吸收镜被动锁模皮秒激光器

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摘要

A diode pumped Nd:YVO_(4) semiconductor saturable absorber mirror (SESAM) passive mode-locked intracavity frequency doubled laser was studied. A type II phase matching KTiOPO_(4)(KTP) crystal and a type I phase matching LiB_(3)O_(5) (LBO) frequency doubling crystal were respectively inserted in the cavity. With a pump power of 4.5 W, a 90 mW output of frequency doubled beam and 29.7 ps pulse duration were achieved with frequency doubled by KTP. With the same pump power a 140 mW output of frequency doubled beam and 3.67 ps pulse duration were achieved with LBO.
机译:研究了二极管泵浦Nd:YVO_(4)半导体可饱和吸收镜(SESAM)无源锁模腔内倍频激光器。将II型相位匹配的KTiOPO_(4)(KTP)晶体和I型相位匹配的LiB_(3)O_(5)(LBO)倍频晶体分别插入腔中。泵浦功率为4.5 W时,通过KTP将频率翻倍,可获得90 mW的倍频光束输出和29.7 ps的脉冲持续时间。在相同的泵浦功率下,使用LBO可获得140 mW的倍频波束输出和3.67 ps的脉冲持续时间。

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