High index contrast Er:Ta_(2)O_(5) waveguide amplifier on oxidised silicon

Ananth Z. Subramanian; G. Senthil Murugan; Michalis N. Zervas; James S. Wilkinson

首页> 外文期刊>Optics Communications: A Journal Devoted to the Rapid Publication of Short Contributions in the Field of Optics and Interaction of Light with Matter >High index contrast Er:Ta_(2)O_(5) waveguide amplifier on oxidised silicon

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High index contrast Er:Ta_(2)O_(5) waveguide amplifier on oxidised silicon

机译：氧化硅上的高折射率对比度Er：Ta_（2）O_（5）波导放大器

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We report a high index contrast erbium doped tantalum pentoxide waveguide amplifier. 2.3 cm long waveguides with erbium concentration of 2.7 X 10~(20) cm~(-3) were fabricated by magnetron sputtering of Er-doped tantalum pentoxide on oxidised silicon substrates and Ar-ion milling with photolithographically defined mask. A net on-chip optical gain of approx2.25 dB/cm at 1531.5 nm was achieved with 20 mW of pump power at 977 nm launched into the waveguide. The pump threshold for transparency was 4.5 mW.

机译：我们报告了高折射率对比contrast掺杂五氧化二钽波导放大器。通过磁控溅射of掺杂的五氧化二钽在氧化硅衬底上并用光刻定义的掩模进行Ar离子铣削，制得了2.3 cm长，concentration浓度为2.7 X 10〜（20）cm〜（-3）的波导。通过在977nm处发射20 mW的泵浦功率，在1531.5 nm处实现约2.25 dB / cm的净片上光学增益。透明度的泵浦阈值为4.5 mW。

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《Optics Communications: A Journal Devoted to the Rapid Publication of Short Contributions in the Field of Optics and Interaction of Light with Matter》 |2012年第2期|共4页
作者
Ananth Z. Subramanian; G. Senthil Murugan; Michalis N. Zervas; James S. Wilkinson;
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正文语种 eng
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Erbium doped waveguide amplifier; Tantalum pentoxide; Optical amplifier; High index contrast; Integrated optics; Erbium;

机译：掺waveguide波导放大器;五氧化二钽;光放大器;高折射率对比度;集成光学;E;

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1. High index contrast Er:Ta_(2)O_(5) waveguide amplifier on oxidised silicon [J] . Ananth Z. Subramanian, G. Senthil Murugan, Michalis N. Zervas, Optics Communications: A Journal Devoted to the Rapid Publication of Short Contributions in the Field of Optics and Interaction of Light with Matter . 2012,第2期

机译：氧化硅上的高折射率对比度Er：Ta_（2）O_（5）波导放大器
2. Ultra-narrow-linewidth, single-frequency distributed feedback waveguide laser in Al_(2)O_(3):Er~(3+) on silicon [J] . E. H. Bernhardi, H. A. G. M. van Wolferen, L. Agazzi, Optics Letters . 2010,第14期

机译：硅上Al_（2）O_（3）：Er〜（3+）中的超窄线宽单频分布式反馈波导激光器
3. Er/sup 3+/ glass waveguide amplifier at 1.5 mu m on silicon [J] . Shmulovich J., Wong A. Electronics Letters . 1992,第13期

机译：硅上1.5μm的Er / sup 3 + /玻璃波导放大器
4. A High Index Contrast Silicon Oxynitride Materials Platform for Er-doped Microphotonic Amplifiers [C] . Sajan Saini, Jessica G. Sandland, Anat Eshed, Symposium Proceedings vol.817; Symposium on New Materials for Microphotonics; 20040413-15; San Francisco,CA(US) . 2004

机译：掺Er微光子放大器的高折射率对比氮氧化硅材料平台
5. Towards an erbium-doped waveguide amplifier sensitized by silicon nanoclusters. [D] . Lenz, Florian C. 2009

机译：迈向由硅纳米团簇敏化的掺-波导放大器。
6. Refractive Indexes and Spectroscopic Properties toDesign Er3+-Doped SiO2–Ta2O5 Films as Multifunctional Planar Waveguide Platformsfor Optical Sensors and Amplifiers [O] . JeffersonL. Ferrari, Karmel de O. Lima, Rogéria R. Gonçalves, 2021

机译：折射率和光谱性质设计ER3 + - 拆卸SIO2-TA2O5电影作为多功能平面波导平台用于光学传感器和放大器
7. Modeling of optical amplifier waveguide based on silicon nanostructures and rare earth ions doped silica matrix gain media by a finite-difference time-domain method: comparison of achievable gain with Er3+ or Nd3+ ions dopants [O] . Cardin, Julien, Fafin, Alexandre, Dufour, Christian, 2015

机译：基于硅纳米结构和稀土离子掺杂二氧化硅基质增益介质的光放大器波导的有限差分时域方法建模：与Er3 +或Nd3 +离子掺杂剂可实现的增益比较

High index contrast Er:Ta_(2)O_(5) waveguide amplifier on oxidised silicon

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