Surface-plasmon Schottky contact detector based on a symmetric metal stripe in silicon

Christine Scales; Ian Breukelaar; Pierre Berini

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Surface-plasmon Schottky contact detector based on a symmetric metal stripe in silicon

机译：基于硅中对称金属条的表面等离子体肖特基接触检测器

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A Schottky contact detector comprising a symmetric metal stripe buried in Si, capable of detecting surface plasmons at wavelengths below the bandgap of Si, is described. A model for the detector is proposed, and its performance is assessed at (lambda)_(0)velence1550 nm assuming a CoSi_(2) stripe in p-type Si. End-fire coupled responsivities of about 0.1 A/W and minimum detectable powers of about -20 dBm are predicted at room temperature.

机译：描述了一种肖特基接触检测器，其包括掩埋在Si中的对称金属条，其能够检测在Si的带隙以下的波长的表面等离子体激元。提出了一种用于检测器的模型，并假设在p型Si中存在CoSi_（2）条，在λ_（0）velence1550 nm处评估了其性能。在室温下，预计端火耦合响应约为0.1 A / W，最小可检测功率约为-20 dBm。

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《Optics Letters》 |2010年第4期|共3页
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Christine Scales; Ian Breukelaar; Pierre Berini;
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1. Surface-plasmon Schottky contact detector based on a symmetric metal stripe in silicon [J] . ◦Christine Scales Ian Breukelaar and Pierre Berini Optics Letters . 2010,第4期

机译：基于硅中对称金属条的表面等离子体肖特基接触检测器
2. Schottky contact surface-plasmon detector integrated with an asymmetric metal stripe waveguide [J] . Ali Akbari, Pierre Berini Applied Physicsletters . 2009,第2期

机译：集成非对称金属条纹波导的肖特基接触表面等离子体探测器
3. Infrared Performance of Symmetric Surface-Plasmon Waveguide Schottky Detectors in Si [J] . Scales C., Breukelaar I., Charbonneau R., Lightwave Technology, Journal of . 2011,第12期

机译：硅中对称表面等离子体波导肖特基探测器的红外性能
4. Locally-oxidized silicon surface-plasmon Schottky detector for telecom wavelengths [C] . Goykhman Ilya, Desiatov Boris, Khurgin Jacob, 2011 8th IEEE International Conference on Group IV Photonics . 2011

机译：用于电信波长的局部氧化硅表面等离子体肖特基探测器
5. Growth and Characterization of (211)B Cadmium Telluride Buffer Layer Grown by Metal-organic Vapor Phase Epitaxy on Nanopatterned Silicon for Mercury Cadmium Telluride Based Infrared Detector Applications. [D] . Shintri, Shashidhar S. 2012

机译：纳米图案化硅上金属有机气相外延生长的（211）B碲化镉缓冲层的生长和表征，用于基于碲化汞的红外探测器。
6. Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts [O] . Gustavo A. Saenz, Goran Karapetrov, James Curtis, -1

机译：具有低肖特基势垒接触的紫外到红外悬浮金属-半导体-金属介观多层MoS2宽带探测器中的超高光响应性
7. Modeling of dual-metal Schottky contacts based silicon micro and nano wire solar cells [O] . Rabbani, M. Golam, Verma, Amit, Adachi, Michael M., 2015

机译：基于硅微米和纳米硅的双金属肖特基接触模型线太阳能电池
8. Silicon Schottky Barriers and p-n Junctions with Highly Stable Aluminum ContactMetallization [R] . Halperin, L. E., Bartur, M., Kolawa, E., 1991

机译：具有高度稳定的铝接触金属化的硅肖特基势垒和p-n结

Surface-plasmon Schottky contact detector based on a symmetric metal stripe in silicon

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