160 GHz harmonic mode-locked AlGaInAs 1.55 (mu)m strained quantum-well compound-cavity laser

Lianping Hou; Mohsin Haji; Rafal Dylewicz; Piotr Stolarz; Bocang Qiu; Eugene A. Avrutin; A. Catrina Bryce

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160 GHz harmonic mode-locked AlGaInAs 1.55 (mu)m strained quantum-well compound-cavity laser

机译：160 GHz谐波锁模AlGaInAs 1.55μm应变量子阱复合腔激光器

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We characterized the reflectivity and the modal discrimination of intracavity reflectors (ICRs) with different numbers of slots and presented harmonic mode-locking operation of a monolithic semiconductor laser comprising a compound cavity formed by a single deeply etched slot ICR fabricated from 1.55 (mu)m AlGaInAs strained quantum well material. Gaussian pulses were generated at a 161.8 GHz repetition rate with a pulse duration of 1.67 ps and a time-bandwidth product of 0.81.

机译：我们表征了具有不同缝隙数量的腔内反射器（ICR）的反射率和模态辨别力，并提出了一种单片半导体激光器的谐波锁模操作，该激光器包括复合腔，该复合腔由单个深蚀刻的缝隙ICR（由1.55μm制成）形成AlGaInAs应变量子阱材料。高斯脉冲以161.8 GHz的重复频率生成，脉冲持续时间为1.67 ps，时间带宽积为0.81。

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《Optics Letters》 |2010年第23期|共3页
作者
Lianping Hou; Mohsin Haji; Rafal Dylewicz; Piotr Stolarz; Bocang Qiu; Eugene A. Avrutin; A. Catrina Bryce;
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1. 160 GHz harmonic mode-locked AlGaInAs 1.55 (mu)m strained quantum-well compound-cavity laser [J] . Lianping Hou, Mohsin Haji, Rafal Dylewicz, Optics Letters . 2010,第23期

机译：160 GHz谐波锁模AlGaInAs 1.55μm应变量子阱复合腔激光器
2. 160 GHz Passively Mode-Locked AlGaInAs 1.55 μm Strained Quantum-Well Lasers With Deeply Etched Intracavity Mirrors [J] . Hou L., Avrutin E.A., Haji M., IEEE journal of selected topics in quantum electronics . 2013,第4期

机译：具有深蚀刻腔内镜的160 GHz无源锁模AlGaInAs 1.55μm应变量子阱激光器
3. 160-GHz Passively Mode-Locked AlGaInAs 1.55- m Strained Quantum-Well Compound Cavity Laser [J] . Hou L., Stolarz P., Dylewicz R., Photonics Technology Letters, IEEE . 2010,第10期

机译：160GHz被动锁模AlGaInAs 1.55-m应变量子阱复合腔激光器
4. 160 GHz 1.55 µm colliding-pulse mode-locked AlGaInAs/InP laser with reduced optical overlap [C] . Hou Lianping, Haji Mohsin, Bryce A. Catrina, 2011 IEEE Photonics Conference . 2011

机译：具有减小的光学重叠的160 GHz 1.55 µm碰撞脉冲锁模AlGaInAs / InP激光器
5. Development and Characterisation of an Actively Mode-Locked Semiconductor Fibre Laser Incorporating a Nonlinear Optical Loop Mirror Operating at 10 GHz to 160 GHz. [D] . Cai, Xing Hua. 2011

机译：集成了工作在10 GHz至160 GHz的非线性光学环形镜的有源锁模半导体光纤激光器的开发和表征。
6. 1.55 µm InAs/GaAs Quantum Dots and High Repetition Rate Quantum Dot SESAM Mode-locked Laser [O] . Z. Y. Zhang, A. E. H. Oehler, B. Resan, -1

机译：1.55 µm InAs / GaAs量子点和高重复率量子点SESAM锁模激光器
7. Passively Mode-Locked 4.6 and 10.5 GHz Quantum Dot Laser Diodes Around 1.55 mu m With Large Operating Regime [O] . Heck, M.J.R., Renault, A.A.L., Bente, E.A.J.M., 2009

机译：具有大工作范围的无源锁模4.6和10.5 GHz量子点激光二极管，约1.55μm
8. Laser Radar 1996, Final Report. (Coherent and Direct Detection Laser Radars at1.55 mu m) (Slutrapport Laserradar 1996 (Koherent och Direktdetekterande Laser Radar vid 1.55 mu m)) [R] . Karlsson, C., Letalick, D. 1997

机译：激光雷达1996年，最终报告。（1.55微米的相干和直接探测激光雷达）（slutrapport Laserradar 1996（Koherent och Direktdetekterande Laser Radar vid1.55μm））

160 GHz harmonic mode-locked AlGaInAs 1.55 (mu)m strained quantum-well compound-cavity laser

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