High-power 880-nm diode-directly-pumped passively mode-locked Nd:YVO_(4) laser at 1342 nm with a semiconductor saturable absorber mirror

Fang-Qin Li; Ke Liu; Lin Han; Nan Zong; Yong Bo; Jing-Yuan Zhang; Qin-Jun Peng; Da-Fu Cui; Zu-Yan Xu

首页> 外文期刊>Optics Letters >High-power 880-nm diode-directly-pumped passively mode-locked Nd:YVO_(4) laser at 1342 nm with a semiconductor saturable absorber mirror

【24h】

High-power 880-nm diode-directly-pumped passively mode-locked Nd:YVO_(4) laser at 1342 nm with a semiconductor saturable absorber mirror

机译：具有半导体可饱和吸收镜的1342 nm高功率880 nm二极管直接泵浦无源锁模Nd：YVO_（4）激光器

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

A high-power 880-nm diode-directly-pumped passively mode-locked 1342 nm Nd:YVO_(4) laser was demonstrated with a semiconductor saturable absorber mirror (SESAM). The laser mode radii in the laser crystal and on the SE-SAM were optimized carefully using the ABCD matrix formalism. An average output power of 2.3 W was obtained with a repetition rate of 76 MHz and a pulse width of 29.2 ps under an absorbed pump power of 12.1 W, corresponding to an optical-optical efficiency of 19.0percent and a slope efficiency of 23.9percent, respectively.

机译：利用半导体可饱和吸收镜（SESAM）演示了大功率880 nm二极管直接泵浦的被动锁模1342 nm Nd：YVO_（4）激光器。使用ABCD矩阵形式对激光晶体中和SE-SAM上的激光模式半径进行了仔细优化。在12.1 W的吸收泵浦功率下，以76 MHz的重复频率和29.2 ps的脉冲宽度获得2.3 W的平均输出功率，对应于19.0％的光学光学效率和23.9％的斜率效率，分别。

著录项

来源
《Optics Letters》 |2011年第8期|共3页
作者
Fang-Qin Li; Ke Liu; Lin Han; Nan Zong; Yong Bo; Jing-Yuan Zhang; Qin-Jun Peng; Da-Fu Cui; Zu-Yan Xu;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. High-power 880-nm diode-directly-pumped passively mode-locked Nd:YVO_(4) laser at 1342 nm with a semiconductor saturable absorber mirror [J] . Fang-Qin Li, Ke Liu, Lin Han, Optics Letters . 2011,第8期

机译：具有半导体可饱和吸收镜的1342 nm高功率880 nm二极管直接泵浦无源锁模Nd：YVO_（4）激光器
2. Passively mode-locked grown-together composite YVOn/Nd：YVO4 crystal laser with a semiconductor saturable absorber mirror under 880-nm direct pumping [J] . 李芳琴, 宗楠, 王志超, 中国光学快报：英文版 . 2011,第004期

机译：在880 nm直接泵浦下具有半导体可饱和吸收镜的被动锁模生长在一起的复合YVOn / Nd：YVO4晶体激光器
3. 7.6 W 1342 nm passively mode-locked picosecond composite Nd:YVO4/YVO4 laser with a semiconductor saturable absorber mirror [J] . Tu Wei, Chen Ying, Zong Nan, Applied optics . 2015,第11期

机译：具有半导体可饱和吸收镜的7.6 W 1342 nm被动锁模皮秒复合Nd：YVO4 / YVO4激光器
4. Contrastive study on two kinds of semiconductor saturable absorber mirrors for side-pumped passively mode-locked Nd:YAG lasers [C] . Qiao Wen, Liqun Sun, Yonggang Wang, International symposium on photoelectronic detection and imaging;ISPDI 2009 . 2009

机译：侧面泵浦无源锁模Nd：YAG激光器的两种半导体可饱和吸收镜的对比研究
5. Development of Epitaxial Strategies towards the Growth of Novel Semiconductor Saturable Absorber Mirrors (SESAMs) for Passively Mode-Locked Optically Pumped Vertical-External-Cavity Surface-Emitting Lasers (VECSELs) [D] . Addamane, Sadhvikas J. 2017

机译：外延战略的发展，以发展用于无源锁模光泵浦垂直外腔表面发射激光器（VECSEL）的新型半导体可饱和吸收镜（SESAM）
6. Watt-level passively Q-switched heavily Er3+-doped ZBLAN fiber laser with a semiconductor saturable absorber mirror [O] . Yanlong Shen, Yishan Wang, Kunpeng Luan, -1

机译：半导体饱和吸收镜的瓦特级被动调Q重掺Er3 +的ZBLAN光纤激光器
7. High-power passively mode-locked Nd:YVO4 laser using SWCNT saturable absorber fabricated by dip coating method [O] . Tang, CY, Chai, Y, Long, H, 2015

机译：采用浸涂法制备的SWCNT可饱和吸收体的大功率无源锁模Nd：YVO4激光器

High-power 880-nm diode-directly-pumped passively mode-locked Nd:YVO_(4) laser at 1342 nm with a semiconductor saturable absorber mirror

摘要

著录项

相似文献

相关主题

期刊订阅