Numerical investigation on the enhanced carrier collection efficiency of Ga-face GaN/InGaN p-i-n solar cells with polarization compensation interlayers

Jih-Yuan Chang; Bo-Ting Liou; Han-Wei Lin; Ya-Hsuan Shih; Shu-Hsuan Chang; Yen-Kuang Kuo

首页> 外文期刊>Optics Letters >Numerical investigation on the enhanced carrier collection efficiency of Ga-face GaN/InGaN p-i-n solar cells with polarization compensation interlayers

【24h】

Numerical investigation on the enhanced carrier collection efficiency of Ga-face GaN/InGaN p-i-n solar cells with polarization compensation interlayers

机译：带有极化补偿夹层的Ga面GaN / InGaN p-i-n太阳能电池提高的载流子收集效率的数值研究

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

The impact of the polarization compensation InGaN interlayer between the heterolayers of Ga-face GaN/InGaN p-i-n solar cells is investigated numerically. Because of the enhancement of carrier collection efficiency, the conversion efficiency is improved markedly, which can be ascribed to both the reduction of the polarization-induced electric field in the InGaN absorption layer and the mitigation of potential barriers at heterojunctions. This beneficial effect is more remarkable in situations with higher polarization, such as devices with a lower degree of relaxation or devices with a higher indium composition in the InGaN absorption layer.

机译：数值研究了Ga面GaN / InGaN p-i-n太阳能电池异质层之间极化补偿InGaN中间层的影响。由于载流子收集效率的提高，转换效率显着提高，这既可以归因于InGaN吸收层中极化感应电场的减小，也可以归因于异质结处势垒的减轻。在极化程度较高的情况下（例如，InGaN吸收层中弛豫度较低的器件或铟成分较高的器件），此有益效果会更加明显。

著录项

来源
《Optics Letters》 |2011年第17期|共3页
作者
Jih-Yuan Chang; Bo-Ting Liou; Han-Wei Lin; Ya-Hsuan Shih; Shu-Hsuan Chang; Yen-Kuang Kuo;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Numerical investigation on the enhanced carrier collection efficiency of Ga-face GaN/InGaN p-i-n solar cells with polarization compensation interlayers [J] . Jih-Yuan Chang, Bo-Ting Liou, Han-Wei Lin, Optics Letters . 2011,第17期

机译：带有极化补偿夹层的Ga面GaN / InGaN p-i-n太阳能电池提高的载流子收集效率的数值研究
2. Polarization compensation at low p-GaN doping density in InGaN/GaN p-i-n solar cells: Effect of InGaN interlayers [J] . Basant Saini, Sonachand Adhikari, Suchandan Pal, Superlattices and microstructures . 2017,第JULa期

机译：InGaN / GaN p-i-n太阳能电池中低p-GaN掺杂密度下的极化补偿：InGaN中间层的影响
3. Numerical Study of the Effects of Hetero-Interfaces, Polarization Charges, and Step-Graded Interlayers on the Photovoltaic Properties of (0001) Face GaN/InGaN p-i-n Solar Cell [J] . Kuo Y.-K., Chang J.-Y., Shih Y.-H. Quantum Electronics, IEEE Journal of . 2012,第3期

机译：异质界面，极化电荷和阶梯式层间层对（0001）面GaN / InGaN p-i-n太阳能电池光伏性能影响的数值研究
4. Numerical Study of InGaN/GaN MQW Solar Cell with Polarization Compensating Interlayer [C] . Basant Saini, Avinashi Kapoor, Sonachand Adhikari, IEEE International Conference on Emerging Electronics . 2016

机译：InGaN / GaN MQW太阳能电池与极化补偿层间的数值研究
5. EVALUATION AND IMPROVEMENT OF CARRIER COLLECTION EFFICIENCY IN AMORPHOUS SILICON-GERMANIUM SOLAR CELLS (PHOTOVOLTAIC, SPECTRAL RESPONSE, AFFINITY GRADIENT). [D] . WIEDEMAN, SCOTT. 1984

机译：非晶硅锗锗太阳能电池（光伏，光谱响应，亲和力梯度）中载子收集效率的评估和改进。
6. Numerical Modeling of the Electronic and Electrical Characteristics of InGaN/GaN-MQW Solar Cells [O] . Bilel Chouchen, Mohamed Hichem Gazzah, Abdullah Bajahzar, 2019

机译：InGaN / GaN-MQW太阳能电池电子和电气特性的数值建模
7. Optimization of p-GaN/InGaN/n-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation Approach [O] . Aniruddha Singh Kushwaha, Pramila Mahala, Chenna Dhanavantri 2014

机译：P-GAN / INGAN / N-GAN双异质结P-I-N太阳能电池优化优化：仿真方法

Numerical investigation on the enhanced carrier collection efficiency of Ga-face GaN/InGaN p-i-n solar cells with polarization compensation interlayers

摘要

著录项

相似文献

相关主题

期刊订阅