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首页> 外文期刊>Optics Letters >Nanoscale avalanche photodiode with self-quenching and ultrahigh ultraviolet/visible rejection ratio
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Nanoscale avalanche photodiode with self-quenching and ultrahigh ultraviolet/visible rejection ratio

机译：具有自猝灭和超高紫外线/可见光抑制比的纳米雪崩光电二极管

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摘要

A 4H-SiC based separate-absorption-multiplication (SAM) avalanche photodiode with a nanoscale multiplication region and a bulk absorption region is proposed and its optoelectronic performance is modeled. The results show that the avalanche breakdown voltage of the device is found to be dependent on the illumination condition. This is attributed to the existence of an illumination-dependent hole potential well in the upper center of the absorption region. Based on the illumination-dependence of avalanche breakdown voltage, a self-quenching and an ultrahigh UV/visible rejection ratio have been realized in this structure.
机译：提出了一种具有纳米级倍增区和体吸收区的基于4H-SiC的分立吸收吸收（SAM）雪崩光电二极管，并对其光电子性能进行了建模。结果表明，发现器件的雪崩击穿电压取决于照明条件。这归因于在吸收区域的上部中心处存在与照明有关的空穴势。基于雪崩击穿电压的照度依赖性，在此结构中实现了自猝灭和超高的UV /可见光抑制比。

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