InP-based short-wave infrared and midwave infrared photodiodes using a novel type-II strain-compensated quantum well absorption region

Baile Chen; Archie L. Holmes

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InP-based short-wave infrared and midwave infrared photodiodes using a novel type-II strain-compensated quantum well absorption region

机译：使用新型II型应变补偿量子阱吸收区的基于InP的短波红外和中波红外光电二极管

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We report on InP-based p-type/intrinsic-type (PIN) photodiodes with a novel strain-compensated type-II InGaAs/GaAsSb quantum well active region. The device has optical response out to 3.0 μm, specific detectivity (D~*) of 7.73 × 10~9 cm Hz~(0.5)/W at 290 K for 2.7 μm. These preliminary results show that this novel strain-compensated approach leads to similar performance when compared to a conventional strain-compensated approach.

机译：我们报告基于InP的p型/本征/ n型（PIN）光电二极管与新型应变补偿II型InGaAs / GaAsSb量子阱活性区域。该器件的光学响应高达3.0μm，在290 K波长下对2.7μm的比探测灵敏度（D〜*）为7.73×10〜9 cm Hz〜（0.5）/ W。这些初步结果表明，与传统的应变补偿方法相比，这种新颖的应变补偿方法具有相似的性能。

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《Optics Letters》 |2013年第15期|共4页
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Baile Chen; Archie L. Holmes;
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1. InP-based short-wave infrared and midwave infrared photodiodes using a novel type-II strain-compensated quantum well absorption region [J] . Baile Chen, Archie L. Holmes Optics Letters . 2013,第15期

机译：使用新型II型应变补偿量子阱吸收区的基于InP的短波红外和中波红外光电二极管
2. Midwave infrared quantum dot avalanche photodiode [J] . David A. Ramirez, Jiayi Shao, Majeed M. Hayat, Applied Physics Letters . 2010,第22期

机译：中波红外量子点雪崩光电二极管
3. Design and modeling of InP-based InGaAs/GaAsSb type-II 'W' type quantum wells for mid-Infrared laser applications [J] . C. H. Pan, C. P. Lee Journal of Applied Physics . 2013,第4期

机译：基于InP的InGaAs / GaAsSb II型“ W”型量子阱的设计和建模，用于中红外激光应用
4. InP-based multiple type-II quantum-well integrated waveguide p-i-n photodiodes for mid-infrared detection [C] . Bassem Tossoun, Ye Wang, Sadhvikas Addamane, IEEE Photonics Society Summer Topical Meeting Series . 2017

机译：基于InP的多种II型量子阱集成波导p-i-n光电二极管用于中红外检测
5. Design and synthesis of liquid crystals with controlled absorption properties in the midwave infrared region. [D] . Tripathi, Suvagata. 2014

机译：在中波红外区域中具有受控吸收特性的液晶的设计和合成。
6. High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices [O] . Anh Minh Hoang, Arash Dehzangi, Sourav Adhikary, -1

机译：基于II型InAs / GaSb / AlSb超晶格的高性能偏置可选三色短波/中波/长波红外光电探测器
7. Giant Two-photon Absorption in Circular Graphene Quantum Dots in Infrared Region [O] . Xiaobo Feng, Zhisong Li, Xin Li, 2016

机译：红外区域圆形石墨烯量子点巨型双光子吸收
8. W-Structured Type-II Superlattice Long-Wave Infrared Photodiodes with High Quantum Efficiency; Journal article [R] . Aifer, E. H., Tischler, J. G., Warner, J. H., 2006

机译：具有高量子效率的W结构II型超晶格长波红外光电二极管;杂志文章

InP-based short-wave infrared and midwave infrared photodiodes using a novel type-II strain-compensated quantum well absorption region

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