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首页> 外文期刊>Optics Letters >Depletion-mode polysilicon optical modulators in a bulk complementary metal-oxide semiconductor process
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Depletion-mode polysilicon optical modulators in a bulk complementary metal-oxide semiconductor process

机译：体互补金属氧化物半导体工艺中的耗尽型多晶硅光学调制器

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摘要

We demonstrate depletion-mode carrier-plasma optical modulators fabricated in a bulk complementary metal-oxide semiconductor (CMOS), DRAM-emulation process. To the best of our knowledge, these are the first depletion-mode modulators demonstrated in polycrystalline silicon and in bulk CMOS. The modulators are based on novel optical microcavities that utilize periodic spatial interference of two guided modes to create field nulls along waveguide sidewalls. At these nulls, electrical contacts can be placed while preserving a high optical Q. These cavities enable active devices in a process with no partial silicon etch and with lateral p-n junctions. We demonstrate two device variants at 5 Gbps data modulation rate near 1610 nm wavelength. One design shows 3.1 dB modulation depth with 1.5 dB insertion loss and an estimated 160 fJ/bit energy consumption, while a more compact device achieves 4.2 dB modulation depth with 4.0 dB insertion loss and 60 fJ/bit energy consumption. These modulators represent a significant breakthrough in enabling active photonics in bulk silicon CMOS--the platform of the majority of microelectronic logic and DRAM processes--and lay the groundwork for monolithically integrated CMOS-to-DRAM photonic links.
机译：我们演示了在大容量互补金属氧化物半导体（CMOS），DRAM仿真过程中制造的耗尽模式载流子等离子体光调制器。据我们所知，这是在多晶硅和体CMOS中首次展示的耗尽型调制器。调制器基于新颖的光学微腔，这些微腔利用两种导模的周期性空间干扰沿波导侧壁产生场零点。在这些零点处，可以放置电触点，同时保持较高的光学Q。这些腔使有源器件可以在工艺中进行部分硅刻蚀且不具有横向p-n结。我们演示了在1610 nm波长附近的5 Gbps数据调制速率下的两种设备变体。一种设计显示3.1 dB调制深度，插入损耗为1.5 dB，估计功耗为160 fJ / bit，而更紧凑的器件则可实现4.2 dB调制深度，插入损耗为4.0 dB，功耗为60 fJ / bit。这些调制器代表了在块状硅CMOS（大多数微电子逻辑和DRAM工艺的平台）中启用有源光子的重大突破，并为单片集成CMOS至DRAM光子链路奠定了基础。

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