We demonstrate a Si sub-bandgap photodiode in a photonic crystal slow-light waveguide that operates at telecom wavelengths and can be fabricated using a Ge-free, standard Si-photonics CMOS process. In photodiodes based on absorption via mid-bandgap states, the slow-light enhancement enables performance that is well balanced among high responsivity, low dark current, high speed, wide working spectrum, and CMOS-process compatibility, all of which are otherwise difficult to achieve simultaneously. Owing to the slow-light effect and supplemental gain at a high reverse bias, the photodiode shows a responsivity of 0.15 A/W with a low dark current of 40 nA, which is attributed to no particular processes such as ion implantation and excess exposure of the Si surface. The maximum responsivity was 0.36 A/W. The modest gain allows for sufficient frequency bandwidth to observe an eye opening at up to 30 Gb/s. (C) 2016 Optical Society of America
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机译：我们演示了在光子晶体慢光波导中的Si子带隙光电二极管，该光子晶体在电信波长下工作，可以使用无Ge的标准Si-光子CMOS工艺制造。在基于通过中带隙状态吸收的光电二极管中，慢光增强功能可在高响应性，低暗电流，高速，宽工作光谱以及CMOS工艺兼容性之间实现良好平衡的性能，否则所有这些都很难实现。同时实现。由于慢光效应和高反向偏置时的补充增益，光电二极管显示出0.15 A / W的响应度，而暗电流仅为40 nA，这归因于没有特殊的过程，例如离子注入和过量暴露Si表面。最大响应度为0.36 A / W。适度的增益允许足够的频率带宽以高达30 Gb / s的速度睁开眼睛。 （C）2016美国眼镜学会
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