Ellipsometric characterization of doped Ge0.95Sn0.05 films in the infrared range for plasmonic applications

Augel L.; Fischer I. A.; Hornung F.; Dressel M.; Berrier A.; Oehme M.; Schulze J.

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Ellipsometric characterization of doped Ge0.95Sn0.05 films in the infrared range for plasmonic applications

机译：等离子体应用中在红外范围内掺杂Ge0.95Sn0.05薄膜的椭偏特性

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GeSn as a group-IV material opens up new possibilities for realizing photonic device concepts in Si-compatible fabrication processes. Here we present results of the ellipsometric characterization of highly p- and n-type doped Ge0.95Sn0.05 alloys deposited on Si substrates investigated in the wavelength range from 1 to 16 mu m. We discuss the suitability of these films for integrated plasmonic applications in the infrared region. (C) 2016 Optical Society of America

机译：GeSn作为IV组材料为在与Si兼容的制造工艺中实现光子器件概念开辟了新的可能性。在这里，我们介绍了在1至16μm波长范围内研究的沉积在Si衬底上的高度p型和n型掺杂的Ge0.95Sn0.05合金的椭偏特征。我们讨论了这些薄膜在红外区域中集成等离子体应用的适用性。（C）2016美国眼镜学会

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《Optics Letters》 |2016年第18期|共3页
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Augel L.; Fischer I. A.; Hornung F.; Dressel M.; Berrier A.; Oehme M.; Schulze J.;
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1. Ellipsometric characterization of doped Ge0.95Sn0.05 films in the infrared range for plasmonic applications [J] . Augel L., Fischer I. A., Hornung F., Optics Letters . 2016,第18期

机译：等离子体应用中在红外范围内掺杂Ge0.95Sn0.05薄膜的椭偏特性
2. Study on the doping effect of spin coated Al and In doped and (Al/In) co-doped ZnO thin films for near-infrared plasmonic applications [J] . Soumya K., Selvam I. Packia, Potty S. N. Thin Solid Films . 2019,第Octa1期

机译：旋涂Al和In掺杂和（Al / In）共掺杂ZnO薄膜对近红外等离子体的掺杂效果研究
3. Low-Optical-Loss Transparent Conductive Ga-Doped ZnO Films for Plasmonics in the Near-Infrared Spectral Range [J] . Nomoto Junichi, Makino Hisao, Yamamoto Tetsuya Science of advanced materials . 2017,第10期

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4. La-doped BaSnO_3 films for near- and mid-infrared plasmonic applications [C] . Heungsoo Kim, Nicholas A. Charipar, Raymond C.Y. Auyeung, Conference on Oxide-based Materials and Devices . 2021

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5. Growth and characterization of phosphorus-doped diamond films: Effects of doping, electrical characterization, EBIC characterization of interfaces and some device applications [D] . Roychoudhury, Rajat 1997

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6. Optimizing Strontium Ruthenate Thin Films for Near-Infrared Plasmonic Applications [O] . Laurentiu Braic, Nikolaos Vasilantonakis, Bin Zou, -1

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Ellipsometric characterization of doped Ge0.95Sn0.05 films in the infrared range for plasmonic applications

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