We demonstrate large-area silicon-on-insulator ring resonators with Q values of about 2 x 10(6) at critical coupling and 3.6 x 10(6) for heavily undercoupled conditions. A model has been developed to understand the impact of waveguide backscattering and subcomponent imperfections on the spectral response of our devices. The model predicts the appearance of signals at ports that would not have them under backscattering-free, ideal-power-splitting conditions. The predictions of our model are shown to match the phenomena observed in our measurements. (C) 2016 Optical Society of America
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机译：我们演示了大面积绝缘体上硅环形谐振器，其临界耦合的Q值约为2 x 10（6），严重耦合条件下的Q值为3.6 x 10（6）。已经开发了一个模型来了解波导反向散射和子组件缺陷对我们设备的光谱响应的影响。该模型可以预测在无背向散射，理想功率分配条件下信号不会出现的端口处的信号出现情况。所显示的模型预测与我们在测量中观察到的现象相匹配。 （C）2016美国眼镜学会
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