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Laser-induced excited-state crossover and spectral variation of Cr3+ in the high-crystal-field environment of CaGa2O4

机译:CaGa2O4的高场场环境下激光诱导的Cr3 +激发态交叉和光谱变化

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摘要

We have studied a wide-bandgap oxide semiconductor, CaGa1.99Cr0.01O4, which possesses high crystal field strength and develops deep traps. These traps efficiently store electric charges after excitation with ultraviolet light. Stimulation of trap charges using infrared radiation (both coherent and incoherent) gives wideband emission of Cr3+ in the red-infrared region, which is similar to the photon upconversion process in lanthanides. Under laser excitation, high photon density and local heating pronounce the coupling of E-2 and T-4(2) states and causes an excited state crossover of the population from the E-2 to T-4(2) state. This expands the emission band-width of Cr3+ up to 900 nm. (C) 2016 Optical Society of America
机译:我们研究了宽带隙氧化物半导体CaGa1.99Cr0.01O4,该半导体具有高的晶体场强度并会形成深陷阱。这些陷阱在被紫外线激发后有效地存储电荷。使用红外辐射(相干和非相干)刺激陷阱电荷会在红红外区域产生Cr3 +的宽带发射,这与镧系元素的光子上转换过程相似。在激光激发下,高光子密度和局部加热会宣告E-2和T-4(2)态的耦合,并导致激发态的人口从E-2跃迁到T-4(2)态。这将Cr3 +的发射带宽扩展到了900 nm。 (C)2016美国眼镜学会

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