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首页> 外文期刊>Physical chemistry chemical physics: PCCP >Multifunctional phosphonic acid self-assembled monolayers on metal oxides as dielectrics, interface modification layers and semiconductors for low-voltage high-performance organic field-effect transistors
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Multifunctional phosphonic acid self-assembled monolayers on metal oxides as dielectrics, interface modification layers and semiconductors for low-voltage high-performance organic field-effect transistors

机译：在金属氧化物上的多功能膦酸自组装单分子层，作为电介质，界面改性层和半导体，用于低压高性能有机场效应晶体管

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摘要

Insulating and semiconducting molecular phosphonic acid (PA) self-assembled monolayers (SAMs) have been developed for applications in organic field-effect transistors (OFETs) for low-power, low-cost flexible electronics. Multifunctional SAMs on ultrathin metal oxides, such as hafnium oxide and aluminum oxide, are shown to enable (1) low-voltage (sub 2 V) OFETs through dielectric and interface engineering on rigid and plastic substrates, (2) simultaneous one-component modification of source-drain and dielectric surfaces in bottom-contact OFETs, and (3) SAM-FETs based on molecular monolayer semiconductors. The combination of excellent dielectric and interfacial properties results in high-performance OFETs with low-subthreshold slopes down to 75 mV dec~(-1), high I_(on)/I_(off) ratios of 10~5-10~7, contact resistance down to 700 O cm, charge carrier mobilities of 0.1-4.6 cm~2 V~(-1) s~(-1), and general applicability to solution-processed and vacuum-deposited n-type and p-type organic and polymer semiconductors.
机译：绝缘和半导体分子膦酸（PA）自组装单层（SAM）已开发用于低功率，低成本柔性电子产品的有机场效应晶体管（OFET）。显示了在超薄金属氧化物（例如氧化ha和氧化铝）上的多功能SAM可实现（1）通过在刚性和塑料基板上进行介电和界面工程实现低压（低于2 V）的OFET，（2）同时进行单组分改性底部接触的OFET中的源极-漏极和介电表面;以及（3）基于分子单层半导体的SAM-FET。优异的介电和界面性能相结合，可实现高性能的OFET，其低亚阈值斜率低至75 mV dec〜（-1），高的I_（on）/ I_（off）比为10〜5-10〜7接触电阻低至700 O cm，电荷载流子迁移率为0.1-4.6 cm〜2 V〜（-1）s〜（-1），并且普遍适用于溶液处理和真空沉积的n型和p型有机物和聚合物半导体。

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