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首页> 外文期刊>Physical chemistry chemical physics: PCCP >Enhanced ionic conductivity in polycrystalline TiO2 by 'one-dimensional doping'
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Enhanced ionic conductivity in polycrystalline TiO2 by 'one-dimensional doping'

机译：通过“一维掺杂”提高多晶TiO2中的离子电导率

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摘要

The influence of line defects (dislocations) on the electrical properties of polycrystalline TiO2 was investigated. Line defects were created in TiO2 during spark plasma sintering at 1000 °C and 400 MPa. TEM characterisation indicates dislocations to be preferably oriented on {110} and {101} planes. The measured electrical conductivity as a function of oxygen partial pressure and temperature revealed that the dislocations play a vital role in modifying the defect chemistry of TiO2. The presence of dislocations enhanced the ionic conductivity over a wide range of oxygen partial pressures. The observed changes can be interpreted in terms of negatively charged dislocation cores and adjacent space charge accumulation layers. The present findings point towards an alternative method to tune the electrical properties of ionic solids.
机译：研究了线缺陷（位错）对多晶TiO2电学性能的影响。在1000°C和400 MPa的火花等离子体烧结过程中，TiO2中产生了线缺陷。 TEM表征表明位错优选在{110}和{101}平面上取向。测得的电导率与氧分压和温度的关系表明，位错在改变TiO2的缺陷化学方面起着至关重要的作用。位错的存在在很大的氧分压范围内提高了离子电导率。观察到的变化可以用带负电的位错核和相邻的空间电荷积累层来解释。目前的发现指向一种调节离子固体电性能的替代方法。

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