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首页> 外文期刊>Physical chemistry chemical physics: PCCP >A nitride based polarization-engineered photocathode for water splitting without a p-type semiconductor
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A nitride based polarization-engineered photocathode for water splitting without a p-type semiconductor

机译：基于氮化物的极化工程光阴极，无需p型半导体即可进行水分解

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摘要

Photoelectrochemicat water splitting is a promising way for hydrogen production with low environmental burden. Although Ill-nitride semiconductors have potentially favorable properties as water splitting photoelectrodes, they have several limitations for practical use currently. In this study, the concept of a polarization-engineered nitride photocathode for water splitting is proposed to overcome this problem. We observed that the proposed GaN/AlN/GaN structure worked as a photocathode even though it consisted of only n-type Ill-nitride semiconductors. This polarization-engineered photocathode showed a remarkably stable and relatively high photocurrent since it can avoid the causes of problems from which both n-type and p-type conventional GaN photoelectrodes suffer.
机译：光电化学水分解法是一种在环境负担较小的情况下生产氢气的有希望的方法。尽管III族氮化物半导体具有作为水分解光电极的潜在有利特性，但是它们目前在实际应用中有一些限制。在这项研究中，提出了用于水分解的偏振工程氮化物光电阴极的概念，以克服这一问题。我们观察到，提出的GaN / AlN / GaN结构即使仅由n型III族氮化物半导体组成，也可以作为光电阴极。这种偏振工程化的光电阴极显示出非常稳定且相对较高的光电流，因为它可以避免引起n型和p型常规GaN光电极都遭受问题的原因。

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