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首页> 外文期刊>Physical chemistry chemical physics: PCCP >Insight into the formation mechanism of graphene quantum dots and the size effect on their electrochemical behaviors
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Insight into the formation mechanism of graphene quantum dots and the size effect on their electrochemical behaviors

机译：深入了解石墨烯量子点的形成机理及其尺寸对电化学行为的影响

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摘要

To study the formation mechanism and influencing factors of graphene quantum dots (GQDs), GQDs with different average sizes were prepared using a modified hydrothermal method with hydrogen peroxide (H2O2) as an etching agent and ammonia as an assistant. It is found that size-controlled GQDs were prepared by adjusting the amount of ammonia and porous reduced graphene oxide (PRGO) debris can be synthesized by reducing the hydrothermal reaction time. Structural changes of final products were mainly attributed to the changes in the etching ability of the hydroxyl radical (OH center dot) against the reduction ability of the hydroxyl group (OH-) in different alkaline environments regulated by ammonia. Furthermore, we studied the electrochemical properties of GQDs and PRGO. The results showed that the specific capacitance of all samples increases linearly with the size and the smallest GQDs can work at the highest scan rate of as high as 5000 V s(-1) with an ultra-fast power response (tau(0) = 63.3 mu s). Thus, these findings elucidate the formation mechanism of GQDs and demonstrate that GQDs are applicable in microelectronic devices with high power response requirements.
机译：为了研究石墨烯量子点（GQDs）的形成机理和影响因素，采用改进的水热法，以过氧化氢（H2O2）为腐蚀剂，以氨为辅助，制备了平均尺寸不同的GQD。发现通过调节氨的量来制备尺寸受控的GQD，并且可以通过减少水热反应时间来合成多孔还原的氧化石墨烯（PRGO）碎片。最终产物的结构变化主要归因于在氨调节的不同碱性环境中，羟基自由基（OH中心点）的蚀刻能力相对于羟基（OH-）的还原能力的变化。此外，我们研究了GQD和PRGO的电化学性质。结果表明，所有样品的比电容均随尺寸线性增加，最小的GQD可以在高达5000 V s（-1）的最高扫描速率下工作，并且具有超快的功率响应（tau（0）= 63.3毫秒）。因此，这些发现阐明了GQD的形成机理，并证明了GQD可用于具有高功率响应要求的微电子器件中。

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