Hole subbands and Landau levels in p-type single A1(x)Ga(1)-As-x/GaAs heterostructures

Ryczko K; Kubisa M; Bryja L; Misiewicz J; Stepniewski R; Byszewski M; Potemski M

首页> 外文期刊>Physica, B. Condensed Matter >Hole subbands and Landau levels in p-type single A1(x)Ga(1)-As-x/GaAs heterostructures

【24h】

Hole subbands and Landau levels in p-type single A1(x)Ga(1)-As-x/GaAs heterostructures

机译：p型单个A1（x）Ga（1）-As-x / GaAs异质结构中的空穴子带和Landau能级

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We studied the energy band structure of two-dimensional holes in p-type single AlxGa1-xAs/GaAs heterojunctions under a strong magnetic field up to 14 T. The electric field present in investigated structures near the interfaces produces a mixing of heavy and light hole states. This results in a strong nonparabolicity and anisotropy of energy levels and their non-linear behavior under an external magnetic field. We calculated energies and wave functions of hole subbands as a function of magnetic field in a Faraday configuration employing a realistic model of potential distribution and using new numerical method described in Kubisa et al., Phys. Rev. B 67 (2003) 035305. The theoretical results were compared with results of low-temperature photoluminescence measurements for samples with different 2D hole densities and a very good agreement was obtained. (C) 2004 Elsevier B.V. All rights reserved.

机译：我们研究了在高达14 T的强磁场下p型单个AlxGa1-xAs / GaAs异质结中二维空穴的能带结构。界面附近存在的被研究结构中的电场会产生重空穴和轻空穴的混合状态。这导致了在外部磁场下能级的强烈非抛物线性和各向异性以及它们的非线性行为。在法拉第配置中，我们使用电势分布的逼真的模型并使用Kubisa等人在Phys。Phys。，1996中的新数值方法，计算了空穴子带的能量和波函数与磁场的函数关系。 Rev. B 67（2003）035305.将理论结果与具有不同2D孔密度的样品的低温光致发光测量结果进行了比较，并获得了很好的一致性。（C）2004 Elsevier B.V.保留所有权利。

著录项

来源
《Physica, B. Condensed Matter》 |2004年第0期|共4页
作者
Ryczko K; Kubisa M; Bryja L; Misiewicz J; Stepniewski R; Byszewski M; Potemski M;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词
single heterojunction; optical properties; electronic states; luminescence; HETEROJUNCTIONS; GAS;

机译：单异质结;光学性能;电子态;发光;异质结;GAS;

相似文献

外文文献
中文文献
专利

1. Hole subbands and Landau levels in p-type single A1(x)Ga(1)-As-x/GaAs heterostructures [J] . Ryczko K, Kubisa M, Bryja L, Physica, B. Condensed Matter . 2004,第0期

机译：p型单个A1（x）Ga（1）-As-x / GaAs异质结构中的空穴子带和Landau能级
2. Magneto-optical studies of 2D hole Landau levels and screening of donor states in p-type modulation doped Ga0.5Al0.5As/GaAs interfaces [J] . Bryja L., Ryczko K., Kubisa M., Physica, E. Low-dimensional systems & nanostructures . 2003,第1a4期

机译：p型调制掺杂Ga0.5Al0.5As / GaAs界面中2D孔Landau能级的磁光研究和施主态的筛选
3. Single-hole transistor in p-type GaAs/AlGaAs heterostructures [J] . Boris Grbic, Renaud Leturcq, Klaus Ensslin, Applied Physics Letters . 2005,第23期

机译：p型GaAs / AlGaAs异质结构中的单孔晶体管
4. Intersubband energies of two-dimensional electron gases in GaAs/AlGaAs heterojunction determined by resonant subband-Landau-level coupling [C] . Zhanghai Chen, Shanghai Institute of Technical Physics, Shanghai, International conference on thin film physics and applications . 1998

机译：共振子带-朗道能级耦合确定GaAs / AlGaAs异质结中二维电子气的子带间能
5. Ballistic transport in two-subband two-dimensional carrier systems at GaAs/AlGaAs heterojunctions. [D] . Lu, JengPing. 1998

机译：GaAs / AlGaAs异质结处两子带二维载波系统中的弹道传输。
6. Intersubband terahertz transitions in Landau level system of cascade GaAs/AlGaAs quantum well structures in strong tilted magnetic field [O] . Maksim P Telenkov, Yury A Mityagin, Petr F Kartsev 2012

机译：强倾斜磁场中级联GaAs / AlGaAs量子阱结构的Landau能级系统中的子带太赫兹跃迁
7. Photoluminescence investigations of 2D hole Landau levels in p-type single Al_{x}Ga_{1-x}As/GaAs heterostructures [O] . Kubisa M., Bryja L., Ryczko K., 2002

机译：p型二维孔道Landau水平的光致发光研究单个al_ {x} Ga_ {1-x} as / Gaas异质结构

Hole subbands and Landau levels in p-type single A1(x)Ga(1)-As-x/GaAs heterostructures

摘要

著录项

相似文献

相关主题

期刊订阅