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Strain, size and composition of InAs quantum sticks, embedded in InP, determined via X-ray anomalous diffraction and diffraction anomalous fine structure in grazing incidence

机译:通过X射线反常衍射和掠射入射中的衍射反常精细结构确定嵌入InP中的InAs量子棒的应变,大小和组成

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摘要

We report on the study of strain, size and composition of small-size encapsulated semiconductor nanostructures. We show that the partial structure factor of As atoms in InAs stick-like nanostructures (quantum sticks), embedded in InP, can be directly extracted from grazing incidence anomalous X-ray diffraction maps at the As K-edge. We have recovered the average height and strain of the islands and determined their composition. The average height of the quantum sticks (QSs), as deduced from the width of the structure factor profile is 2.54 nm. The InAs out of plane deformation, relative to InP, is equal to 6.1%. Fixed-Q anomalous diffraction spectra, measured at the As K-edge, in grazing incidence provide clear evidence of pure InAs QSs. This is confirmed by the analysis of the diffraction anomalous fine structure (DAFS) that also gives a direct way to recover the strain accomodation inside the quantum sticks. Finite difference method calculations reproduce well the diffraction data. Chemical mixing at interfaces is at most 1 ML. This paper shows that ultimate application of anomalous diffraction and DAFS together with reciprocal space maps is a powerful method to sudy the structural properties of nanostructures. (C) 2004 Elsevier B.V. All rights reserved.
机译:我们报告了对小型封装半导体纳米结构的应变,尺寸和组成的研究。我们显示嵌入InP中的InAs棒状纳米结构(量子棒)中As原子的部分结构因子可以直接从As K边缘的掠入射异常X射线衍射图中提取。我们已经恢复了岛屿的平均高度和应变,并确定了它们的组成。从结构因子轮廓的宽度推导得出的量子棒(QSs)的平均高度为2.54 nm。相对于InP,InAs面外变形等于6.1%。在掠入射中在As K边缘处测量的固定Q异常衍射光谱提供了纯InAs QS的清晰证据。衍射异常精细结构(DAFS)的分析证实了这一点,该结构也提供了一种直接的方法来恢复量子棒内部的应变适应。有限差分法计算可以很好地再现衍射数据。界面处的化学混合最多为1 ML。本文表明,异常衍射和DAFS以及相互的空间图的最终应用是研究纳米结构的结构特性的有力方法。 (C)2004 Elsevier B.V.保留所有权利。

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