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首页> 外文期刊>Physica, B. Condensed Matter >An attempt to specify thermal history in CZ silicon wafers and possibilities for its modification
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An attempt to specify thermal history in CZ silicon wafers and possibilities for its modification

机译：尝试指定CZ硅晶片的热历史及其修改的可能性

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The term thermal history of silicon wafers represents the whole variety of process parameters of crystal growth. The aim of this contribution is an attempt to specify thermal history by one parameter that is directly correlated to the bulk microdefect density. The parameter that reflects thermal history and correlates it with nucleation of oxide precipitates is the concentration Of VO2 complexes. The VO2 concentration in silicon wafers is too low to be measured by FTIR but it can be obtained from the loss of interstitial oxygen during a standardized thermal treatment. Based on this, the vacancy concentration frozen during crystal cooling in the ingot can be calculated. RTA treatments above 1150 degrees C create a well defined level of the VO2 concentration in silicon wafers. This means that a well controlled modification of the thermal history is possible. We also investigated the kinetics of reduction of the as-grown excess VO2 concentration during RTA treatments at 950 degrees C and 1050 degrees C and the effectiveness of this attempt to totally delete the thermal history. (C) 2007 Elsevier B.V. All rights reserved.
机译：硅晶片的热历史一词代表晶体生长的整个过程参数。这种贡献的目的是尝试通过一个与体微缺陷密度直接相关的参数来指定热历史。反映热历史并与氧化物沉淀成核相关的参数是VO2配合物的浓度。硅片中的VO2浓度太低，无法通过FTIR进行测量，但是可以通过标准化热处理过程中间隙氧的损失来获得。基于此，可以计算出晶锭在晶体冷却期间冻结的空位浓度。高于1150摄氏度的RTA处理可在硅晶片中产生明确定义的VO2浓度水平。这意味着可以很好地控制热历史。我们还研究了在950摄氏度和1050摄氏度RTA处理过程中减少成年过量VO2浓度的动力学，以及这种尝试完全消除热历史的有效性。 （C）2007 Elsevier B.V.保留所有权利。

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