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Performance degradation mechanism of irradiated GaAlAs LED

机译：辐照GaAlAs LED的性能下降机理

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The degradation in performance of the device on GaAlAs light-emitting diodes (LEDs) irradiated by 2 MeV electrons and 70 MeV protons is investigated taking into account the recovery behavior. The reverse current increases after irradiation and the capacitance decreases. The device performance degradation is proportional to the fluence. The fluence rate is also relevant for degradation in electron irradiation. Low fluence rate leads to larger degradation compared to those associated with high fluence rate resulting from heat impact in bulk. The radiation damage of proton is larger than irradiation damage of electron, which is caused by the difference in mass and the possibility of nuclear collision for the formation of lattice defects. After irradiation, the device performance recovers by thermal annealing. The recovery behavior resulting from thermal annealing implies that the increase of reverse current for electroirradiation is mainly due to damage of the surface region. (C) 2007 Published by Elsevier B.V.
机译：考虑到恢复行为，研究了2 MeV电子和70 MeV质子辐照的GaAlAs发光二极管（LED）上器件性能的下降。辐照后反向电流增加，电容减小。器件性能的下降与注量成正比。通量率也与电子辐射的降解有关。与由于散装的热影响而导致的高通量率相比，低通量率导致更大的降解。质子的辐射损伤大于电子的辐射损伤，这是由于质量差异和核碰撞形成晶格缺陷的可能性所引起的。辐照后，器件性能通过热退火恢复。由热退火引起的恢复行为暗示用于电辐照的反向电流的增加主要是由于表面区域的损坏。 （C）2007由Elsevier B.V.发布

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