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首页> 外文期刊>Physica, B. Condensed Matter >The optical parameters and photoconductivity of CdxIn1Se9-x chalcogenide thin films
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The optical parameters and photoconductivity of CdxIn1Se9-x chalcogenide thin films

机译：CdxIn1Se9-x硫族化物薄膜的光学参数和光电导性

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摘要

An investigation of the optical properties of amorphous thin films of CdxIn1Se9-x alloy (x = 1-5 at %) prepared by the thermal evaporation technique was carried out. The different optical parameters of thin films were studied by the transmission and reflection measurements at normal incidence. The absorption data revealed the existence of allowed indirect and allowed direct transitions. The spectral behavior of the refractive index (n) shows anomalous dispersion in wavelength corresponding to energy (2-3 eV), while for higher wavelengths, it shows normality dispersion for all compositions in agreement with the amorphous films. The single oscillator strength S. and its position lambda(o) were determined and absorption properties in the band-to-band range were studied. Photosensitivity and photoconductivity properties of CdxIn1Se9-x thin films were reviewed. (c) 2006 Elsevier B.V. All rights reserved.
机译：对通过热蒸发技术制备的CdxIn1Se9-x合金（x = 1-5 at％）非晶薄膜的光学性能进行了研究。通过法向入射的透射和反射测量研究了薄膜的不同光学参数。吸收数据表明存在允许的间接和允许的直接跃迁。折射率（n）的光谱行为显示出对应于能量（2-3 eV）的波长中的反常色散，而对于更高的波长，它显示出与非晶膜一致的所有组成的正态色散。确定了单振子强度S.及其位置λ（o），并研究了频带间的吸收特性。综述了CdxIn1Se9-x薄膜的光敏性和光电导性能。 （c）2006 Elsevier B.V.保留所有权利。

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