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首页> 外文期刊>Physica, B. Condensed Matter >Second harmonic generation in an asymmetric rectangular quantum well under hydrostatic pressure
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Second harmonic generation in an asymmetric rectangular quantum well under hydrostatic pressure

机译：静水压力下非对称矩形量子阱中的二次谐波产生

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摘要

The effects of structure parameters and hydrostatic pressure oil the electronic states and the second harmonic generation (SHG) susceptibility of asymmetric rectangular quantum Well (ARQW) are studied. The asymmetry of the potential can be controlled by changing the structural parameters and this adjustable asymmetry is important for optimizing the SHG susceptibility. We have calculated analytically the electronic states in ARQW within the framework of the envelope function approach. Numerical results for Al-x/Ga1-x/As/GaAs/AlxrGa1-xr. As quantum well are presented. The results obtained show that the hydrostatic pressure and the structure parameters of ARQW significantly influence the SHG susceptibility. This behavior in the SHG susceptibility gives a new degree of freedom in regions of interest for device applications. (c) 2007 Elsevier B.V. All rights reserved.
机译：研究了结构参数和静液压油对非对称矩形量子阱（ARQW）的电子态和二次谐波（SHG）磁化率的影响。电位的不对称性可以通过改变结构参数来控制，这种可调节的不对称性对于优化SHG磁化率很重要。我们在包络函数方法的框架内分析计算了ARQW中的电子状态。 Al-x / Ga1-x / As / GaAs / AlxrGa1-xr的数值结果。作为量子阱被提出。结果表明，静水压力和ARQW的结构参数显着影响SHG敏感性。 SHG敏感性中的这种行为在设备应用的目标区域中提供了新的自由度。 （c）2007 Elsevier B.V.保留所有权利。

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