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首页> 外文期刊>Physica, B. Condensed Matter >Epitaxial growth of high-temperature ZnO layers on sapphire substrate by magnetron sputtering
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Epitaxial growth of high-temperature ZnO layers on sapphire substrate by magnetron sputtering

机译：磁控溅射在蓝宝石衬底上外延生长高温ZnO层

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摘要

Undoped ZnO films were grown epitaxially by magnetron sputtering on a sapphire substrate in the high-temperature range of 560-720 degrees C. The crystalline and optical quality was improved simultaneously with increasing growth temperature, and the dislocation density was also reduced. The surfaces of the deposited samples showed pyramidal-shaped protrusions with a hexagonal base and an increase in the density of protrusions with increasing growth temperature. The region including the surface protrusions was highly defective and had rotated grains compared with the general ZnO film. In addition, the increase in growth temperature led to a deep level photoluminescence emission related to oxygen vacancies and a change in the electronic characteristics from a semi-insulator to an n-type semiconductor. Published by Elsevier B.V.
机译：通过磁控溅射在蓝宝石衬底上在560-720摄氏度的高温范围内外延生长未掺杂的ZnO薄膜。随着生长温度的提高，晶体和光学质量得到改善，位错密度也随之降低。沉积样品的表面显示出具有六边形基底的金字塔形突起，并且突起的密度随着生长温度的升高而增加。与普通的ZnO薄膜相比，包括表面凸起的区域具有较高的缺陷率并且具有旋转的晶粒。另外，生长温度的升高导致与氧空位有关的深水平的光致发光发射以及电子特性从半绝缘体到n型半导体的变化。由Elsevier B.V.发布

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