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Deep electronic states associated with a metastable hole trap in n-type GaN

机译：与n型GaN中的亚稳态空穴陷阱相关的深电子态

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Deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS (LDLTS) have been applied to MOCVD-grown GaN to study the properties of a metastable hole trap which is unstable after thermal stress. Initially, three peaks due to electron emission at 150, 400 and 550K were visible in the DLTS spectrum at a rate window of 200s(-1). However, when the next rate window was sampled immediately afterwards, the DLTS scan showed a large negative peak which dominated the scan at 410 K, due to hole emission. The hole trap then remained detectable by DLTS for up to 1 week. LDLTS of the hole trap was also carried out and multiple peaks were observed. Changing the fill pulse length did not affect the capture properties of this centre, and it is proposed that it is a charge state of the Ga vacancy complexed with one or more O atoms. (C) 2007 Elsevier B.V. All rights reserved.
机译：深层瞬态光谱法（DLTS）和高分辨率拉普拉斯DLTS（LDLTS）已应用于MOCVD生长的GaN，以研究在热应力作用下不稳定的亚稳态空穴陷阱的特性。最初，由于在150、400和550K处的电子发射而产生的三个峰在DLTS光谱中以200s（-1）的速率窗口可见。但是，当随后立即采样下一个速率窗口时，由于空穴发射，DLTS扫描显示出较大的负峰，该负峰主导了410 K的扫描。然后，DLTS仍可检测到空穴陷阱长达1周。还对空穴阱进行了LDLTS，并观察到多个峰。改变填充脉冲长度不影响该中心的俘获性能，并且提出这是与一个或多个O原子络合的Ga空位的电荷状态。 （C）2007 Elsevier B.V.保留所有权利。

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