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Luminescence properties of defects in ZnO

机译:ZnO中缺陷的发光特性

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We briefly review the luminescence properties of defects in ZnO responsible for broad bands in the visible part of the photoluminescence (PL) spectrum. Bulk and thin-film ZnO samples produced by several companies and research groups were studied at different temperatures and excitation intensities. Steady-state and time-resolved PL was analyzed. We resolved and classified about 10 PL bands having maxima from 1.75 to 2.6 eV at 10 K. Types of transitions and possible assignments of the PL bands are briefly discussed. (c) 2007 Elsevier B.V. All rights reserved.
机译:我们简要回顾了负责在光致发光(PL)光谱的可见部分中的宽带的ZnO中的缺陷的发光特性。由多家公司和研究小组生产的大块和薄膜ZnO样品在不同温度和激发强度下进行了研究。分析了稳态和时间分辨的PL。我们解析并分类了大约10个PL波段,它们在10 K时的最大值为1.75到2.6 eV。简要讨论了转换类型和PL波段的可能分配。 (c)2007 Elsevier B.V.保留所有权利。

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