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Observation of phase-locking and phase-transition of pores in silicon electrochemistry

机译:硅电化学中孔的锁相和相变的观察

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In this work, via anodization of n-type silicon specimens pre-textured with different patterns, phase-transition of pores induced by varied HF concentrations and phase-locking of pores imposed by predefined nuclei were evidenced. Based on the analysis of scanning electron microscope (SEM) micrographs and current–voltage curves, the competition between physical and chemical elements was found to be crucial to understand the observations. Not least, our results indicate strongly that pore density can act independently as a function of the initial morphology of sample surface. Electric-field effect as well as current-burst-model (CBM) was employed to interpret the underlying mechanism.
机译:在这项工作中,通过对预先贴有不同图案的n型硅样品进行阳极氧化,证明了由不同的HF浓度引起的孔的相变和由预定义的核施加的孔的相锁。根据对扫描电子显微镜(SEM)显微照片和电流-电压曲线的分析,发现物理和化学元素之间的竞争对于理解观察结果至关重要。尤其重要的是,我们的结果强烈表明,孔密度可以根据样品表面的初始形态独立发挥作用。电场效应和电流突发模型(CBM)被用来解释其潜在机理。

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