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Photoluminescence and Raman spectra of the ordered vacancy compound CuGa5Se8

机译:有序空位化合物CuGa5Se8的光致发光和拉曼光谱

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摘要

We studied the photoluminescence (PL) and Raman properties of the ordered defect compound CuGa5Se8. Twelve peaks were detected from the room-temperature Raman spectra with the A(1) mode around 160 cm(-1). Due to the stress in the polycrystalline thin film the corresponding frequencies of the Raman modes of a CuGa5Se8 single crystal were slightly shifted. One broad asymmetric PL band at 1.788 and 1.765eV was observed at 10K in the PL spectra of CuGa5Se8 single crystal and polycrystalline layer, respectively. The temperature and laser power dependencies of the PL spectra were also studied. The shape and properties of the PL band assure the presence of potential fluctuations and the analyses of the PL data suggest that the emission is due to band-to-tail (BT) or band-toimpurity (BI) recombination. (C) 2007 Elsevier B.V. All rights reserved.
机译:我们研究了有序缺陷化合物CuGa5Se8的光致发光(PL)和拉曼性能。从室温拉曼光谱以160 cm(-1)的A(1)模式检测到十二个峰。由于多晶薄膜中的应力,CuGa5Se8单晶的拉曼模式的相应频率略有偏移。在CuGa5Se8单晶层和多晶层的PL光谱中,分别在10K处观察到1.788和1.765eV处一个宽的不对称PL带。还研究了PL光谱的温度和激光功率依赖性。 PL带的形状和特性可确保存在潜在的波动,并且PL数据的分析表明,发射是由于带尾(BT)或带杂质(BI)重组引起的。 (C)2007 Elsevier B.V.保留所有权利。

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