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首页> 外文期刊>Physica, B. Condensed Matter >Point and extended defects engineering as a key to advancing the technology of light-emitting diodes based on single-crystal Si and SiGe layers
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Point and extended defects engineering as a key to advancing the technology of light-emitting diodes based on single-crystal Si and SiGe layers

机译：点和扩展缺陷工程是推进基于单晶Si和SiGe层的发光二极管技术的关键

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A conception of defect engineering in the device technology is briefly reviewed. Examples of defect engineering in the technology of Si-based light-emitting diodes (LEDs) with the room temperature (RT) Er- and Ho-related luminescence as well as SiGe-based LEDs with the RT near-band-edge luminescence are discussed. Effect of a temperature enhancement of the rare-earth-related electroluminescence (EL) intensity in the LEDs fabricated on the (111)-oriented Si substrates was observed at avalanche and tunnelling breakdown in p-n junctions and its nature was revealed. The analysis of the experimental data shows that recombination involving excitons is the dominant mechanism of near-band-edge radiative recombination in all the Si1-xGex (0 <= x <= 1) light-emitting structures at RT. Some of them are characterized by record values of EL intensity and/or external quantum efficiency, so they can be used as effective light emitters for Si optoelectronics. (C) 2007 Elsevier B.V. All rights reserved.
机译：简要回顾了设备技术中的缺陷工程学概念。讨论了具有室温（RT）Er和Ho相关发光的硅基发光二极管（LED）以及具有RT近带边缘发光的SiGe基发光二极管技术中的缺陷工程示例。 。在雪崩时观察到在（111）取向的Si衬底上制造的LED中稀土相关电致发光（EL）强度的温度增强效应，并且在p-n结中出现隧穿击穿，并揭示了其性质。对实验数据的分析表明，在室温下，所有Si1-xGex（0 <= x <= 1）发光结构中，涉及激子的重组是近带边缘辐射重组的主要机制。其中一些的特征在于EL强度和/或外部量子效率的记录值，因此它们可用作Si光电器件的有效发光器。 （C）2007 Elsevier B.V.保留所有权利。

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