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Manganese-hydrogen complex in GaP

机译：GaP中的锰氢络合物

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Manganese (Mn) acceptors are well known to form complexes with hydrogen (H) in InP and GaAs crystals. However, to our knowledge, the formation of such complexes in Gal? has not been reported yet. The difficulty in formation of Mn-H complexes in GaP can be explained by unfavorable mutual positions of H and Mn energy levels in GaP band structure. A series of Gal? samples intentionally doped with Mn and some of them co-doped with zinc (Zn) and containing also unintentional H and carbon (C) has been investigated. In very slightly p-type samples, a local vibration mode at 2369.4cm(-1) at 6K was found, which we ascribed to Mn-H complexes by comparison of energy positions corresponding to analogical "Mn-H" complexes in other semiconductors. In more strongly p-type samples, these complexes were not found but Zn-H and C-H complexes were present. (C) 2007 Elsevier B.V. All rights reserved.
机译：众所周知，锰（Mn）受体与InP和GaAs晶体中的氢（H）形成络合物。然而，据我们所知，在加尔？尚未被报道。在GaP中形成Mn-H复合物的困难可以通过GaP能带结构中H和Mn能级的不利位置相互解释。一系列的Gal？研究了有意掺有Mn的样品，其中一些掺有锌（Zn），还含有非故意的H和碳（C）。在非常小的p型样品中，发现在6K处为2369.4cm（-1）的局部振动模式，通过比较对应于其他半导体中类似“ Mn-H”配合物的能量位置，我们将其归因于Mn-H配合物。在更强的p型样品中，未发现这些配合物，但存在Zn-H和C-H配合物。 （C）2007 Elsevier B.V.保留所有权利。

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