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首页> 外文期刊>Physica, B. Condensed Matter >Doubly charged state of EL2 defect in MOCVD-grown GaAs
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Doubly charged state of EL2 defect in MOCVD-grown GaAs

机译：MOCVD生长的GaAs中EL2缺陷的双电荷状态

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EL2 is the ubiquitous native defect in crystalline GaAs grown by a variety of different techniques. It has been proposed to be a doubly charged deep-level center with two states having distinct energy levels in the band gap. While the singly charged state has been the subject of many experimental studies and is, therefore, well established, the doubly charged state has only been occasionally alluded to in the literature. This paper provides evidence for a dominant inadvertent deep level in p-type GaAs most likely to be the doubly charged state of the EL2 center. Deep-level transient spectroscopy (DLTS) has been applied to characterize epitaxial layers of p-type GaAs grown on P+ GaAs substrates by low-pressure metal organic chemical vapor deposition (LP-MOCVD). A pronounced peak is observed in the majority carrier (hole) emission deep-level spectra. Thermal emission rate of holes from the corresponding deep level is found to exhibit a strong electric field dependence, showing an increase of more than two orders of magnitude with an increase of the electric field by a factor of similar to 2. The thermal activation energy for this level is found to vary from 0.29 to 0.61 eV as the electric field is varied from 2.8 x 10(5) to 1.4 x 10(5) V/cm. Direct pulse-filling measurements point to a temperature-dependent behavior of the hole capture cross section of this level. We identify this inadvertent deep-level defect, commonly observed in p-type GaAs grown by a variety of different methods, with the doubly charged state of the well-known As-Ga antisite related defect, EL2. (C) 2007 Elsevier B.V. All rights reserved.
机译：EL2是通过多种不同技术生长的晶体GaAs中普遍存在的天然缺陷。已经提出是双电荷深层中心，在带隙中具有两个具有不同能级的两个状态。尽管单电荷状态已经是许多实验研究的主题，因此已经被很好地确立，但是双电荷状态只是在文献中偶尔被提及。本文为p型GaAs的显性无意深能级提供了证据，最有可能是EL2中心的双电荷状态。深层瞬态光谱法（DLTS）已用于表征通过低压金属有机化学气相沉积（LP-MOCVD）在P + GaAs衬底上生长的p型GaAs的外延层。在多数载流子（空穴）发射深能谱中观察到一个明显的峰。发现来自相应深层的空穴的热发射率表现出很强的电场依赖性，显示出随着电场的增加而增加了两个数量级以上，其系数近似为2。随着电场从2.8 x 10（5）到1.4 x 10（5）V / cm的变化，该水平在0.29到0.61 eV之间变化。直接脉冲填充测量表明该水平的空穴捕获横截面的温度相关行为。我们确定了这种无意的深层缺陷，通常在通过各种不同方法生长的p型GaAs中发现，并且具有众所周知的As-Ga反位相关缺陷EL2的双电荷状态。 （C）2007 Elsevier B.V.保留所有权利。

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