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首页> 外文期刊>Physica, B. Condensed Matter >Electronic transport properties of YBaCo2-xCuxO5+delta (0 = x = 1) at high temperature
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Electronic transport properties of YBaCo2-xCuxO5+delta (0 = x = 1) at high temperature

机译：YBaCo2-xCuxO5 +δ（0 <= x <= 1）的高温电子输运性质

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摘要

YBaCo2-xCuxO5+delta (0 <= x <= 1) samples were synthesized and the effect of Cu doping on the oxygen desorption and electronic transport properties was investigated from room temperature (RT) to 800 degrees C. The samples begin to release oxygen when temperature is above approximately 300 degrees C, and the amount of oxygen desorption decreases with increasing Cu content. Transport properties measurements show that all samples behave as p-type semiconductor in the temperature range of RT-300 degrees C. When temperature is above approximately 300 degrees C, the resistivity and Seebeck coefficients of low Cu-cloped samples increase with the increase of temperature due to oxygen desorption from the lattices, whereas high Cu-cloped samples keep the semiconducting conduction in all temperature range measured because Cu doping suppresses the release of oxygen. Cu doping tends to increase the resistivity and Seebeck coefficients of YBaCo2-xCuxO5+delta. The reason can be explained by the drop of hole concentration resulting from the reordering of CoO5 pyramidal and CoO6 octahedral planes along a and b directions in YBaCo2-xCuxO5+delta.
机译：合成了YBaCo2-xCuxO5 +δ（0 <= x <= 1）样品，研究了Cu掺杂对室温（RT）到800摄氏度下氧解吸和电子传输性能的影响。样品开始释放氧当温度高于约300摄氏度时，氧气的解吸量随Cu含量的增加而降低。传输性质的测量表明，所有样品在RT-300摄氏度的温度范围内均表现为p型半导体。当温度高于约300摄氏度时，低铜封闭样品的电阻率和塞贝克系数随温度的升高而增加由于氧从晶格中解吸，而高铜封闭的样品在所有测量温度范围内均保持半导体导电性，因为铜掺杂会抑制氧的释放。 Cu掺杂趋于增加YBaCo 2 -xCuxO 5 +δ的电阻率和塞贝克系数。原因可以通过在YBaCo2-xCuxO5 + delta中沿a和b方向对CoO5锥面和CoO6八面体平面进行重新排序而导致的空穴浓度下降来解释。

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