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Studies of defects in photonic materials

机译：光子材料中缺陷的研究

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Indium tin oxide (ITO) films have high optical transmission and infrared reflectance, good electrical conductivity, excellent substrate adherence, hardness and chemical inertness. These properties lead to many applications in the area of photonics. Bombardment of ITO films with 1 MeV protons has been carried out resulting in an observed darkening. Insights into the darkening mechanism that consists of three growth stages as a function of fluence are provided by a study of the optical absorption and X-ray lattice parameter. A new interpretation is provided for the darkening mechanism in terms of the production of defect clusters resulting from the atomic displacements during implantation. CsI crystals are very effective scintillator materials for particle detectors in high energy physics. Although radiation hard, radiation damage produces colour centres in CsI that reduce light emission and can negatively affect the luminescent centres. Using a combination of Raman and optical absorption spectroscopy applied to CsI crystals bombarded with 1 MeV protons at 300 K, the resulting defects are shown to be F-type centres and interstitial V-centres having the I-3(-) structure and being responsible for absorption bands at 2.7 and 3.4 eV. Isochronal and isothermal annealing experiments show a mutual decay of the F and V-centres. The results are discussed in relation to the formation of interstitial iodine aggregates of various types in alkali iodides.
机译：氧化铟锡（ITO）膜具有高透光率和红外反射率，良好的导电性，优异的基材粘附性，硬度和化学惰性。这些特性导致在光子学领域的许多应用。已经对具有1 MeV质子的ITO膜进行轰击，导致观察到的变黑。通过对光吸收和X射线晶格参数的研究，可以洞悉由三个生长阶段组成的变暗机理与能量密度的关系。对于暗化机理，提供了一种新的解释，即在注入过程中由于原子位移而产生的缺陷簇。 CsI晶体是用于高能物理中粒子检测器的非常有效的闪烁体材料。尽管辐射强度很高，但辐射损伤会在CsI中产生色心，从而降低发光量并可能对发光中心产生负面影响。通过将拉曼光谱和光吸收光谱结合应用于在300 K下用1 MeV质子轰击的CsI晶体，所得缺陷显示为具有I-3（-）结构的F型中心和间隙V中心，并且是负责任的用于2.7和3.4 eV的吸收带。等时和等温退火实验显示F和V中心相互衰减。讨论了有关在碱性碘化物中形成各种类型的间隙碘聚集体的结果。

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