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首页> 外文期刊>Physica, B. Condensed Matter >Muonium dynamics in doped Si probed by photoexcited TF-mu SR measurements
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Muonium dynamics in doped Si probed by photoexcited TF-mu SR measurements

机译:通过光激发TF-mu SR测量探测掺杂Si中的动力学

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摘要

Photoexcited TF-gSR measurements have been used recently to investigate muonium dynamics in high resistivity Si. In this paper, we report investigations of p-type and n-type Si. It is shown that illumination can induce a change in the relaxation rates of the detected muon signal in differently doped samples under both LF and TF configurations. In addition, the temperature dependence of Mu(BC)(+) in p-type Si suggests that the diamagnetic charge exchange processes are similar to that of intrinsic Si.
机译:最近已使用光激发TF-gSR测量来研究高电阻率Si中的mu动力学。在本文中,我们报告了对p型和n型Si的研究。结果表明,在LF和TF两种配置下,照明都能在不同掺杂的样品中诱导检测到的μ子信号的弛豫率发生变化。此外,p型Si中Mu(BC)(+)的温度依赖性表明,抗磁性电荷交换过程与本征Si相似。

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