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首页> 外文期刊>Physica, B. Condensed Matter >Thermal stability study of palladium and cobalt Schottky contacts on n-Ge (100) and defects introduced during contacts fabrication and annealing process
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Thermal stability study of palladium and cobalt Schottky contacts on n-Ge (100) and defects introduced during contacts fabrication and annealing process

机译：n-Ge（100）上钯和钴肖特基接触的热稳定性研究以及在接触制造和退火过程中引入的缺陷

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摘要

Palladium (Pd) and cobalt (Co) Schottky barrier diodes were fabricated on n-Ge (100). The Pd-Schottky contacts were deposited by resistive evaporation while the Co-contacts were deposited by resistive evaporation and electron beam deposition. Current-voltage (I-V), capacitarice-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements were performed on as-deposited and annealed samples. Electrical properties of Pd and Co samples annealed between 30 and 600 degrees C indicate the formation of one phase of palladium germanide and two phases of cobalt germanide. No defects were observed for the resistively evaporated as-deposited Pd-and Co-Schottky contacts. A hole trap at 0.33 eV above the valence band was observed on the Pd-Schottky contacts after annealing at 300 degrees C. An electron trap at 0.37eV below the conduction band and a hole trap at 0.29eV above the valence band was observed on as-deposited Co-electron beam deposited Schottky contacts. Rutherford back scattering (RBS) technique was also used to characterise the Co-Ge, for as-deposited and annealed samples.
机译：在n-Ge（100）上制作了钯（Pd）和钴（Co）肖特基势垒二极管。 Pd-肖特基接触通过电阻蒸发沉积，而Co接触通过电阻蒸发和电子束沉积沉积。在沉积和退火后的样品上进行了电流-电压（I-V），电容电容电压（C-V）和深层瞬态光谱（DLTS）测量。在30到600摄氏度之间退火的Pd和Co样品的电性能表明，形成了一相的锗化钯和两相的锗化钴。对于电阻蒸发沉积的Pd和Co-肖特基接触，没有观察到缺陷。在300摄氏度下退火后，在Pd-Schottky触点上观察到了价带上方0.33 eV处的空穴陷阱。在导电层下方，电子陷阱在导带下方0.37eV处，空穴陷阱在价带上方0.29eV处。沉积的共电子束沉积的肖特基接触。卢瑟福反向散射（RBS）技术还用于表征沉积和退火样品的Co-Ge。

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