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首页> 外文期刊>Physica, B. Condensed Matter >Structural and impedance spectroscopic studies of samarium modified lead zirconate titanate ceramics
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Structural and impedance spectroscopic studies of samarium modified lead zirconate titanate ceramics

机译：mar改性钛酸锆钛酸铅陶瓷的结构和阻抗谱研究

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摘要

The polycrystalline samples of Pb1-xSmx(Zr0.60Ti0.40)(1-x/4)O-3 (PSZT) where x = 0.00, 0.03, 0.06 and 0.09 were prepared by a high-temperature solid-state reaction technique. The preliminary structural analysis using X-ray diffraction (XRD) data collected at room temperature has confirmed the formation of single-phase compounds in tetragonal crystal system. The morphological study of each sample using scanning electron microscope (SEM) has revealed that the grains are uniformly distributed through out the surfaces of the samples. Using complex impedance spectroscopy (CIS) technique, the electrical impedance and modulus properties of the materials were studied in a wide range of temperatures at different frequencies. The impedance analysis indicates the presence of bulk resistive contributions in the materials which is found to decrease on increasing temperature. The nature of variation of resistances with temperature suggests a typical negative temperature coefficient of resistance (NTCR) type behavior of the materials. The complex modulus plots clearly exhibits the presence of grain boundaries along with the bulk contributions in the PSZT materials. The presence of non-Debye type of relaxation has been confirmed by the complex impedance analysis. The variation of dc conductivity (bulk) with temperature demonstrates that the compounds exhibit Arrhenius type of electrical conductivity.
机译：通过高温固态反应技术制备了Pb1-xSmx（Zr0.60Ti0.40）（1-x / 4）O-3（PSZT）的多晶样品，其中x = 0.00、0.03、0.06和0.09。使用在室温下收集的X射线衍射（XRD）数据进行的初步结构分析已确认四方晶体系统中形成了单相化合物。使用扫描电子显微镜（SEM）对每个样品进行的形态研究表明，晶粒均匀分布在整个样品表面。使用复阻抗谱（CIS）技术，在很宽的温度范围内以不同的频率研究了材料的电阻抗和模量特性。阻抗分析表明材料中存在体电阻贡献，发现其随温度升高而降低。电阻随温度变化的性质表明材料的典型负电阻温度系数（NTCR）类型行为。复数模量图清楚地显示了晶界的存在以及PSZT材料中的体积贡献。复阻抗分析已证实存在非德拜类型的弛豫。直流电导率（散装）随温度的变化表明，这些化合物表现出Arrhenius型电导率。

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