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首页> 外文期刊>Physica, B. Condensed Matter >Isotope study of far IR absorption of bistable centers in hydrogen-implanted silicon
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Isotope study of far IR absorption of bistable centers in hydrogen-implanted silicon

机译:氢注入硅中双稳态中心远红外吸收的同位素研究

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摘要

Far IR study of high-purity crystalline silicon implanted by protons and deuterons at low ion beam current density and room temperature was performed. Isotope analysis shows that a set of new absorption bands at 200–1500 cm~(-1) are connected to hydrogen-related centers including bistable centers. It is found that the behavior of the bands correlates with that of high-order bands observed in the near infrared absorption spectra of neutron-irradiated silicon. The bands are tentatively associated with nanostructured hydrogen-related defects.
机译:进行了质子和氘核在低离子束电流密度和室温下注入的高纯度晶体硅的远红外研究。同位素分析表明,一组在200–1500 cm〜(-1)处的新吸收带与氢相关的中心(包括双稳态中心)相连。发现该带的行为与在中子辐照硅的近红外吸收光谱中观察到的高阶带的行为相关。这些带暂时与纳米结构的氢相关缺陷相关。

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