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首页> 外文期刊>Physica, B. Condensed Matter >Determination of trap depth and trap density in Se70Te30-xZnx thin films using thermally stimulated current measurements
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Determination of trap depth and trap density in Se70Te30-xZnx thin films using thermally stimulated current measurements

机译：使用热激电流测量确定Se70Te30-xZnx薄膜中的陷阱深度和陷阱密度

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摘要

In the present paper concentration of traps (N-t) and trap depth (E-t) have been calculated by thermally stimulated current (TSC) measurements in amorphous Se70Te30-xZnx (x = 2, 4) thin films. These measurements are carried out at three different heating rates. It is observed that the amount of thermally stimulated current gradually increases and the temperature (T-m), at which maxima in TSC occurs, shifts to higher temperatures with increasing heating rates (beta) as expected. The trap depth is found to be quite different for x = 2 and x = 4. The concentration of traps also increases slightly at higher concentration of Zn.
机译：在本文中，陷阱的浓度（N-t）和陷阱的深度（E-t）是通过非晶Se70Te30-xZnx（x = 2，4）薄膜中的热激电流（TSC）测量来计算的。这些测量是在三种不同的加热速率下进行的。可以观察到，受热电流的量逐渐增加，并且如预期的那样，随着加热速率（β）的增加，TSC中出现最大值的温度（T-m）移至更高的温度。发现对于x = 2和x = 4，陷阱深度完全不同。在较高的Zn浓度下，陷阱的浓度也略有增加。

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