Primary defect transformations in high-resistivity p-type silicon irradiated with electrons at cryogenic temperatures

L.F.Makarenko; S.B.Lastovski; F.P.Korshunov; L.I.Murin; M.Moll

首页> 外文期刊>Physica, B. Condensed Matter >Primary defect transformations in high-resistivity p-type silicon irradiated with electrons at cryogenic temperatures

【24h】

Primary defect transformations in high-resistivity p-type silicon irradiated with electrons at cryogenic temperatures

机译：低温下电子辐照的高电阻率p型硅的主要缺陷转变

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

It has been revealed that self-interstitials formed under low intensity electron irradiation in high resistivity p-type silicon can be retained frozen up to room temperature. Low thermal mobility of the self-interstitials suggests that Frenkel pairs in silicon can be stable at temperatures of about or higher than 100 K. A broad DLTS peak with activation energy of 0.14–0.17 eV can be identified as related to Frenkel pairs. This peak anneals out at temperatures of 120140 K. Experimental evidences are presented that becoming more mobile under forward current injection the self-interstitials change their charge state to a less positive one.

机译：已经发现，在高电阻率p型硅中在低强度电子辐照下形成的自填隙体可以冻结到室温。自填隙子的低热迁移率表明硅中的Frenkel对在大约或高于100 K的温度下可以保持稳定。可以确定活化能为0.14-0.17 eV的宽DLTS峰与Frenkel对有关。该峰值在120140 K的温度下退火。实验证据表明，在正向电流注入下，自填隙层的电荷状态变为较弱的正电荷，从而变得更具移动性。

著录项

来源
《Physica, B. Condensed Matter》 |2009年第24期|共4页
作者
L.F.Makarenko; S.B.Lastovski; F.P.Korshunov; L.I.Murin; M.Moll;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词
Silicon; Self-interstitials; Frenkel pairs; DLTS;

机译：硅;插页式广告;Frenkel对;DLTS;

相似文献

外文文献
中文文献
专利

1. Primary defect transformations in high-resistivity p-type silicon irradiated with electrons at cryogenic temperatures [J] . L.F.Makarenko, S.B.Lastovski, F.P.Korshunov, Physica, B. Condensed Matter . 2009,第23a24期

机译：低温下电子辐照的高电阻率p型硅的主要缺陷转变
2. The study of 1 MeV electron irradiation induced defects in N-type and P-type monocrystalline silicon [J] . Babaee S., Ghozati S. B. Radiation Physics and Chemistry . 2017,第期

机译：n型和P型单晶硅硅中1 eV电子照射诱导缺陷的研究
3. Comparative studies of defect production in heavily doped silicon under fast electron irradiation at different temperatures [J] . V. V. Emtsev, P. Ehrhart, D. S. Poloskin, Journal of Materials Science. Materials in Electronics . 2007,第7期

机译：不同温度下快速电子辐照下重掺杂硅中缺陷产生的比较研究
4. Primary defect transformations in high-resistivity p-type silicon irradiated with electrons at cryogenic temperatures [C] . L.F. Makarenko, S.B. Lastovski, F.P. Korshunov, Physica B: Condensed matter . 2009

机译：低温下电子辐照的高电阻率p型硅的主要缺陷转变
5. Cryogenic Irradiation and Low Temperature Annealing of Semiconductor and Optical Materials [D] . Reinke, Benjamin Tyler. 2016

机译：半导体和光学材料的低温辐照和低温退火
6. Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs [O] . Jie Gu, Qingzhu Zhang, Zhenhua Wu, 2021

机译：P型门 - 全面硅纳米线MOSFET的低温传输特性
7. The kinetic of point defect transformation during the annealing process in electron-irradiated silicon [O] . Gaidar G.P., Dolgolenko A.P., Litovchenko P.G. 2011

机译：电子辐照硅退火过程中点缺陷转变的动力学
8. Defects in Neutron-Irradiated Extrinsic p-Type Silicon [R] . Young, M. H., Stafsudd, O. M., Brower, K. L., 1980

机译：中子辐照外来p型硅的缺陷

Primary defect transformations in high-resistivity p-type silicon irradiated with electrons at cryogenic temperatures

摘要

著录项

相似文献

相关主题

期刊订阅