Defects of Ge quantum dot arrays on the Si(0 01) surface

V.A.Yuryev; L.V.Arapkina

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Defects of Ge quantum dot arrays on the Si(0 01) surface

机译：Si（0 01）表面上的Ge量子点阵列的缺陷

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摘要

The defects of Ge quantum dot arrays formed at moderate temperatures on the Si(0 01) surface have been investigated by the ultra high vacuum scanning tunnelling microscope integrated with the molecular beam epitaxy chamber. A preliminary classification of the defects has been carried out.Morphological peculiarities of the defects have been studied. The surface densities of defects of different types have been determined.

机译：通过结合分子束外延室的超高真空扫描隧道显微镜研究了在中等温度下在Si（0 01）表面上形成的Ge量子点阵列的缺陷。对缺陷进行了初步分类。研究了缺陷的形态特征。已经确定了不同类型的缺陷的表面密度。

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《Physica, B. Condensed Matter》 |2009年第24期|共4页
作者
V.A.Yuryev; L.V.Arapkina;
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正文语种 eng
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Ge quantum dots; Dense arrays; Defects; Scanning tunnelling microscopy;

机译：锗量子点密集阵列缺陷扫描隧道显微镜;

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Defects of Ge quantum dot arrays on the Si(0 01) surface

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